Inventor
LIN TA-CHUN
TW67 patents
⚠️ This page may combine multiple inventors who share the name “LIN TA-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
47 patentsUS11302692B2Apr 12, 2022
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11101359B2Aug 24, 2021
Gate-all-around (GAA) method and devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9559134B2Jan 31, 2017
Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11996320B2May 28, 2024
Reducing parasitic capacitance in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11923413B2Mar 5, 2024
Semiconductor structure with extended contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742349B2Aug 29, 2023
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11545573B2Jan 3, 2023
Hybrid nanostructure and fin structure device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11515199B2Nov 29, 2022
Semiconductor structures including standard cells and tap cells
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11362096B2Jun 14, 2022
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245005B2Feb 8, 2022
Method for manufacturing semiconductor structure with extended contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11152488B2Oct 19, 2021
Gate-all-around structure with dummy pattern top in channel region and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11037831B2Jun 15, 2021
Gate structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12464763B2Nov 4, 2025
Hybrid nanostructure and fin structure device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12414354B2Sep 9, 2025
Semiconductor strutures with dielectric fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12412777B2Sep 9, 2025
Reducing parasitic capacitance in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12266653B2Apr 1, 2025
Semiconductor structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12183735B2Dec 31, 2024
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12080607B2Sep 3, 2024
Structure and method for FinFET device with source/drain modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12074057B2Aug 27, 2024
Isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12051695B2Jul 30, 2024
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11967532B2Apr 23, 2024
Gate spacers and methods of forming the same in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11804485B2Oct 31, 2023
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11749677B2Sep 5, 2023
Semiconductor structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11688791B2Jun 27, 2023
Gate structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11658074B2May 23, 2023
Structure and method for FinFET device with source/drain modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532502B2Dec 20, 2022
Reducing parasitic capacitance in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11239339B2Feb 1, 2022
Gate structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12550428B2Feb 10, 2026
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12538533B2Jan 27, 2026
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520520B2Jan 6, 2026
Isolation structure for isolating source/drain region structure from adjacent source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507450B2Dec 23, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389645B2Aug 12, 2025
Semiconductor structure with extended contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300698B2May 13, 2025
Isolation structure for preventing unintentional merging of epitaxially grown source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12057485B2Aug 6, 2024
Gate-all-around (GAA) method and devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990525B2May 21, 2024
Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791217B2Oct 17, 2023
Gate structure and method with dielectric gates and gate-cut features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749683B2Sep 5, 2023
Isolation structure for preventing unintentional merging of epitaxially grown source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349002B2May 31, 2022
Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11315924B2Apr 26, 2022
Isolation structure for preventing unintentional merging of epitaxially grown source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133224B2Sep 28, 2021
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998237B2May 4, 2021
Gate structure and method with dielectric gates and gate-cut features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12394663B2Aug 19, 2025
Isolation with multi-step structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12317567B2May 27, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11728206B2Aug 15, 2023
Isolation with multi-step structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11251069B2Feb 15, 2022
Method for forming isolation with multi-step structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12593489B2Mar 31, 2026
Semiconductor structure including gate spacer layer and dielectric layer having portion lower than top surface of gate spacer layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12588229B2Mar 24, 2026
Gate-top dielectric structure for self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
AVERMEDIA TECH INC
2 patentsTAIWAN SEMICONDUCTOR MFG COMPANY LTD
1 patentShowing the top 50 of 67 patents by PatentIndex Score.