P

Inventor

LIN TA-CHUN

TW67 patents
⚠️ This page may combine multiple inventors who share the name “LIN TA-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

47 patents
US11302692B2Apr 12, 2022

Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11101359B2Aug 24, 2021

Gate-all-around (GAA) method and devices

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9559134B2Jan 31, 2017

Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11996320B2May 28, 2024

Reducing parasitic capacitance in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11923413B2Mar 5, 2024

Semiconductor structure with extended contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742349B2Aug 29, 2023

Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11545573B2Jan 3, 2023

Hybrid nanostructure and fin structure device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11515199B2Nov 29, 2022

Semiconductor structures including standard cells and tap cells

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11362096B2Jun 14, 2022

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245005B2Feb 8, 2022

Method for manufacturing semiconductor structure with extended contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11152488B2Oct 19, 2021

Gate-all-around structure with dummy pattern top in channel region and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11037831B2Jun 15, 2021

Gate structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12464763B2Nov 4, 2025

Hybrid nanostructure and fin structure device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12414354B2Sep 9, 2025

Semiconductor strutures with dielectric fins

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12412777B2Sep 9, 2025

Reducing parasitic capacitance in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12266653B2Apr 1, 2025

Semiconductor structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12183735B2Dec 31, 2024

Semiconductor devices and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12080607B2Sep 3, 2024

Structure and method for FinFET device with source/drain modulation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12074057B2Aug 27, 2024

Isolation structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12051695B2Jul 30, 2024

Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11967532B2Apr 23, 2024

Gate spacers and methods of forming the same in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11804485B2Oct 31, 2023

Semiconductor devices and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11749677B2Sep 5, 2023

Semiconductor structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11688791B2Jun 27, 2023

Gate structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11658074B2May 23, 2023

Structure and method for FinFET device with source/drain modulation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532502B2Dec 20, 2022

Reducing parasitic capacitance in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11239339B2Feb 1, 2022

Gate structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12550428B2Feb 10, 2026

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12538533B2Jan 27, 2026

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520520B2Jan 6, 2026

Isolation structure for isolating source/drain region structure from adjacent source/drain structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507450B2Dec 23, 2025

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389645B2Aug 12, 2025

Semiconductor structure with extended contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300698B2May 13, 2025

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12057485B2Aug 6, 2024

Gate-all-around (GAA) method and devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990525B2May 21, 2024

Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791217B2Oct 17, 2023

Gate structure and method with dielectric gates and gate-cut features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749683B2Sep 5, 2023

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349002B2May 31, 2022

Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11315924B2Apr 26, 2022

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133224B2Sep 28, 2021

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998237B2May 4, 2021

Gate structure and method with dielectric gates and gate-cut features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12394663B2Aug 19, 2025

Isolation with multi-step structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12317567B2May 27, 2025

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11728206B2Aug 15, 2023

Isolation with multi-step structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11251069B2Feb 15, 2022

Method for forming isolation with multi-step structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12593489B2Mar 31, 2026

Semiconductor structure including gate spacer layer and dielectric layer having portion lower than top surface of gate spacer layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12588229B2Mar 24, 2026

Gate-top dielectric structure for self-aligned contact

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59

AVERMEDIA TECH INC

2 patents

TAIWAN SEMICONDUCTOR MFG COMPANY LTD

1 patent

Showing the top 50 of 67 patents by PatentIndex Score.