Inventor
SAMAVEDAN SRIKANTH BALAJI
US2 patents
Patents
2 patentsUS10056468B2Aug 21, 2018
Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins
GLOBALFOUNDRIES INC3 citations71
US10243059B2Mar 26, 2019
Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins
GLOBALFOUNDRIES INC1 citations60