Inventor
MA SEAN
US21 patents
Patents
21 patentsUS11527612B2Dec 13, 2022
Gate-all-around integrated circuit structures having vertically discrete source or drain structures
INTEL CORP6 citations74
US11367722B2Jun 21, 2022
Stacked nanowire transistor structure with different channel geometries for stress
INTEL CORP6 citations74
US11398560B2Jul 26, 2022
Contact electrodes and dielectric structures for thin film transistors
INTEL CORP3 citations73
US11257904B2Feb 22, 2022
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
INTEL CORP2 citations73
US11404319B2Aug 2, 2022
Vertically stacked finFETs and shared gate patterning
INTEL CORP5 citations72
US12142689B2Nov 12, 2024
Transistor including wrap around source and drain contacts
INTEL CORP0 citations62
US12100623B2Sep 24, 2024
Vertically stacked finFETs and shared gate patterning
INTEL CORP0 citations62
US11881517B2Jan 23, 2024
Channel structures for thin-film transistors
INTEL CORP0 citations62
US11862729B2Jan 2, 2024
Vertical multi-gate thin film transistors
INTEL CORP0 citations62
US11756998B2Sep 12, 2023
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
INTEL CORP0 citations62
US11522060B2Dec 6, 2022
Epitaxial layers on contact electrodes for thin- film transistors
INTEL CORP1 citations62
US11476366B2Oct 18, 2022
Transistor including wrap around source and drain contacts
INTEL CORP0 citations62
US11335789B2May 17, 2022
Channel structures for thin-film transistors
INTEL CORP1 citations62
US11245038B2Feb 8, 2022
Vertical multi-gate thin film transistors
INTEL CORP1 citations62
US11527613B2Dec 13, 2022
Removal of a bottom-most nanowire from a nanowire device stack
INTEL CORP0 citations61
US10892326B2Jan 12, 2021
Removal of a bottom-most nanowire from a nanowire device stack
INTEL CORP0 citations61
US11695081B2Jul 4, 2023
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
INTEL CORP0 citations52
US11574910B2Feb 7, 2023
Device with air-gaps to reduce coupling capacitance and process for forming such
INTEL CORP0 citations52
US11508577B2Nov 22, 2022
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
INTEL CORP0 citations52
US11355621B2Jun 7, 2022
Non-planar semiconductor device including a replacement channel structure
INTEL CORP0 citations52
US12009433B2Jun 11, 2024
Multi-dielectric gate stack for crystalline thin film transistors
INTEL CORP0 citations49