Inventor
CEA STEPHEN
US19 patents
Patents
19 patentsUS7045408B2May 16, 2006
Integrated circuit with improved channel stress properties and a method for making it
INTEL CORP32 citations92
US11527612B2Dec 13, 2022
Gate-all-around integrated circuit structures having vertically discrete source or drain structures
INTEL CORP6 citations74
US11367722B2Jun 21, 2022
Stacked nanowire transistor structure with different channel geometries for stress
INTEL CORP6 citations74
US11824107B2Nov 21, 2023
Wrap-around contact structures for semiconductor nanowires and nanoribbons
INTEL CORP2 citations73
US11527640B2Dec 13, 2022
Wrap-around contact structures for semiconductor nanowires and nanoribbons
INTEL CORP3 citations73
US11276780B2Mar 15, 2022
Transistor contact area enhancement
INTEL CORP2 citations73
US12176429B2Dec 24, 2024
Wrap-around contact structures for semiconductor nanowires and nanoribbons
INTEL CORP0 citations62
US11984449B2May 14, 2024
Channel structures with sub-fin dopant diffusion blocking layers
INTEL CORP0 citations62
US11843052B2Dec 12, 2023
Transistor contact area enhancement
INTEL CORP0 citations62
US11521968B2Dec 6, 2022
Channel structures with sub-fin dopant diffusion blocking layers
INTEL CORP0 citations62
US12336278B2Jun 17, 2025
Gate-all-around integrated circuit structures having high mobility
INTEL CORP0 citations61
US11538806B2Dec 27, 2022
Gate-all-around integrated circuit structures having high mobility
INTEL CORP0 citations61
US11527613B2Dec 13, 2022
Removal of a bottom-most nanowire from a nanowire device stack
INTEL CORP0 citations61
US10892326B2Jan 12, 2021
Removal of a bottom-most nanowire from a nanowire device stack
INTEL CORP0 citations61
US11923412B2Mar 5, 2024
Sub-fin leakage reduction for template strained materials
INTEL CORP0 citations59
US11600696B2Mar 7, 2023
Sub-fin leakage reduction for template strained materials
INTEL CORP0 citations59
US11495683B2Nov 8, 2022
Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material
INTEL CORP0 citations59
US12294006B2May 6, 2025
Gate-all-around integrated circuit structures having insulator substrate
INTEL CORP0 citations52
US11688780B2Jun 27, 2023
Deep source and drain for transistor structures with back-side contact metallization
INTEL CORP0 citations52