Inventor

ALHUSSIEN ABDELHAKIM S

US72 patents

⚠️ This page may combine multiple inventors who share the name “ALHUSSIEN ABDELHAKIM S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ALHUSSIEN ABDELHAKIM S

MICRON TECHNOLOGY INC

Self adapting iterative read calibration to retrieve data from memory cells

Intelligent proactive responses to operations to read data from memory cells

Detection of an incorrectly located read voltage

Compound feature generation in classification of error rate of data retrieved from memory cells

Read soft bits through boosted modulation following reading hard bits

Compound feature generation in classification of error rate of data retrieved from memory cells

Self adapting iterative read calibration to retrieve data from memory cells

Determine optimized read voltage via identification of distribution shape of signal and noise characteristics

Reading of soft bits and hard bits from memory cells

Memory system performance enhancements using measured signal and noise characteristics of memory cells

Adaptive and/or iterative operations in executing a read command to retrieve data from memory cells

Compute an optimized read voltage

Optimization of soft bit windows based on signal and noise characteristics of memory cells

Intelligent proactive responses to operations to read data from memory cells

Classification of error rate of data retrieved from memory cells

Detection of an incorrectly located read voltage

Adaptive and/or iterative operations in executing a read command to retrieve data from memory cells

Self adapting iterative read calibration to retrieve data from memory cells

Dynamic adjustment of data integrity operations of a memory system based on error rate classification

Compound feature generation in classification of error rate of data retrieved from memory cells

Memory system performance enhancements using measured signal and noise characteristics of memory cells

Read model of memory cells using information generated during read operations

Detection of an incorrectly located read voltage

Coarse calibration based on signal and noise characteristics of memory cells collected in prior calibration operations

Search for an optimized read voltage

Track charge loss based on signal and noise characteristics of memory cells collected in calibration operations

Read disturb mitigation based on signal and noise characteristics of memory cells collected for read calibration

Iterative read calibration enhanced according to patterns of shifts in read voltages

Read model of memory cells using information generated during read operations

SEAGATE TECHNOLOGY LLC

Read retry operations where likelihood value assignments change sign at different read voltages for each read retry

Read retry operations with read reference voltages ranked for different page populations of a memory

Read retry operations with estimation of written data based on syndrome weights

Read retry for non-volatile memories

Reduced polar codes

Adaptive read threshold voltage tracking with bit error rate estimation based on non-linear syndrome weight mapping

Independent read threshold voltage tracking for multiple dependent read threshold voltages using syndrome weights

Establishing parameters of subsequent read retry operations based on syndrome weights of prior failed decodings

Write mapping to mitigate hard errors via soft-decision decoding

Data decoder with trapping set flip bit mapper

Adjusting log likelihood ratio values to compensate misplacement of read voltages

Recovery strategy that reduces errors misidentified as reliable

Mitigation of write errors in multi-level cell flash memory through adaptive error correction code decoding

Soft decoding of polar codes

Multiple retry reads in a read channel of a memory

Write mapping to mitigate hard errors via soft-decision decoding

Reduced polar codes

Flash channel with selective decoder likelihood dampening

Multi-tier detection and decoding in flash memories utilizing data from additional pages or wordlines

Read retry for non-volatile memories

On-die error detection and correction during multi-step programming