Inventor
SUGIURA MASAHITO
JP25 patents
⚠️ This page may combine multiple inventors who share the name “SUGIURA MASAHITO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
16 patentsUS6143081ANov 7, 2000
Film forming apparatus and method, and film modifying apparatus and method
TOKYO ELECTRON LTD186 citations99
US6126753AOct 3, 2000
Single-substrate-processing CVD apparatus and method
TOKYO ELECTRON LTD180 citations99
US6232248B1May 15, 2001
Single-substrate-heat-processing method for performing reformation and crystallization
TOKYO ELECTRON LTD84 citations98
US6467491B1Oct 22, 2002
Processing apparatus and processing method
TOKYO ELECTRON LTD97 citations96
US6428850B1Aug 6, 2002
Single-substrate-processing CVD method of forming film containing metal element
TOKYO ELECTRON LTD71 citations96
US10041174B2Aug 7, 2018
Method for forming carbon nanotubes and carbon nanotube film forming apparatus
TOKYO ELECTRON LTD39 citations93
US9059178B2Jun 16, 2015
Method for forming carbon nanotubes and carbon nanotube film forming apparatus
TOKYO ELECTRON LTD36 citations93
US7037560B1May 2, 2006
Film forming method, and film modifying method
TOKYO ELECTRON LTD26 citations92
US6800546B2Oct 5, 2004
Film forming method by radiating a plasma on a surface of a low dielectric constant film
TOKYO ELECTRON LTD20 citations92
US11972929B2Apr 30, 2024
Processing apparatus and film forming method
TOKYO ELECTRON LTD2 citations72
US12456620B2Oct 28, 2025
Film-forming method
TOKYO ELECTRON LTD0 citations62
US12018375B2Jun 25, 2024
Flim forming method of carbon-containing film by microwave plasma
TOKYO ELECTRON LTD0 citations62
US12014907B2Jun 18, 2024
Method and device for forming graphene structure
TOKYO ELECTRON LTD0 citations62
US11302576B2Apr 12, 2022
Method of making a semiconductor device including a graphene barrier layer between conductive layers
TOKYO ELECTRON LTD0 citations62
US12534800B2Jan 27, 2026
Pre-coating method and processing apparatus
TOKYO ELECTRON LTD0 citations51
US6890848B2May 10, 2005
Fabrication process of a semiconductor device
TOKYO ELECTRON LTD0 citations46