Inventor
FUJITA HISANORI
JP37 patents
⚠️ This page may combine multiple inventors who share the name “FUJITA HISANORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ASICS CORP
17 patentsUS7779558B2Aug 24, 2010
Shock absorbing device for shoe sole
ASICS CORP86 citations98
USD542522SMay 15, 2007
Shoe midsole
ASICS CORP95 citations97
USD1050694SNov 12, 2024
Shoe
ASICS CORP17 citations93
US7987618B2Aug 2, 2011
Shock absorbing device for shoe sole
ASICS CORP40 citations92
USD582658SDec 16, 2008
Shoe
ASICS CORP20 citations92
USD571090SJun 17, 2008
Pair of shoe outsoles
ASICS CORP35 citations92
USD561434SFeb 12, 2008
Pair of shoe outsoles
ASICS CORP47 citations92
USD1069356SApr 8, 2025
Shoe
ASICS CORP9 citations85
USD1051569SNov 19, 2024
Shoe
ASICS CORP11 citations84
US9901136B2Feb 27, 2018
Shock absorbing structure for shoe sole side face and shoe to which the shock absorbing structure is applied
ASICS CORP9 citations78
US11617416B2Apr 4, 2023
Shoe upper
ASICS CORP2 citations73
US11452332B2Sep 27, 2022
Shoe sole, and shoe provided with shoe sole
ASICS CORP1 citations62
US10165830B2Jan 1, 2019
Shoe upper
ASICS CORP1 citations62
USD1075245SMay 20, 2025
Shoe sole
ASICS CORP0 citations56
US11051580B2Jul 6, 2021
Shoe having cushioning structure
ASICS CORP0 citations51
US12478135B2Nov 25, 2025
Sole and shoe
ASICS CORP0 citations50
US12396515B2Aug 26, 2025
Shoe sole and shoe
ASICS CORP0 citations50
MITSUBISHI MONSANTO CHEM
9 patentsUS4378259AMar 29, 1983
Method for producing mixed crystal wafer using special temperature control for preliminary gradient and constant layer deposition suitable for fabricating light-emitting diode
MITSUBISHI MONSANTO CHEM59 citations96
US4168998ASep 25, 1979
Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder
MITSUBISHI MONSANTO CHEM42 citations93
US4865655ASep 12, 1989
Gallium arsenide phosphide mixed crystal epitaxial wafer with a graded buffer layer
MITSUBISHI MONSANTO CHEM36 citations91
US4252576AFeb 24, 1981
Epitaxial wafer for use in production of light emitting diode
MITSUBISHI MONSANTO CHEM9 citations74
US4756792AJul 12, 1988
Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film
MITSUBISHI MONSANTO CHEM8 citations71
US5103270AApr 7, 1992
Double hetero type epitaxial wafer with refractive indices
MITSUBISHI MONSANTO CHEM10 citations70
US4216484AAug 5, 1980
Method of manufacturing electroluminescent compound semiconductor wafer
MITSUBISHI MONSANTO CHEM4 citations63
US4865682ASep 12, 1989
Growth method of an organic compound single crystal and a boat used therefor
MITSUBISHI MONSANTO CHEM3 citations57
US4609411ASep 2, 1986
Liquid-phase epitaxial growth method of a IIIb-Vb group compound
MITSUBISHI MONSANTO CHEM4 citations57
SAKURA COLOR PROD CORP
5 patentsUS5324764AJun 28, 1994
Erasable ink composition for writing on impervious surface
SAKURA COLOR PROD CORP47 citations92
US5316574AMay 31, 1994
Erasable ink composition for writing on impervious surface
SAKURA COLOR PROD CORP23 citations92
US5849814ADec 15, 1998
Ink composition
SAKURA COLOR PROD CORP17 citations84
US5536761AJul 16, 1996
Water base dye ink composition
SAKURA COLOR PROD CORP18 citations74
US5334649AAug 2, 1994
Water base ink composition
SAKURA COLOR PROD CORP10 citations74