Inventor

NISHIMURA TADASHI

JP68 patents

⚠️ This page may combine multiple inventors who share the name “NISHIMURA TADASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NISHIMURA TADASHI

MITSUBISHI ELECTRIC CORP

Semiconductor device having metal silicide film

Semiconductor device with improved substrate bias voltage generating circuit

Method of manufacturing semiconductor substrate having total and partial dielectric isolation

Semiconductor device having an SOI structure and a manufacturing method thereof

Laser beam irradiating apparatus enabling uniform laser annealing

Thin film field effect element having an LDD structure

Thin-film soi-mosfet with a body region

Multiple layer static random access memory device

Vertical type MOS transistor and method of formation thereof

Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer

Method of forming field-effect transistors using selectively beam-crystallized polysilicon channel regions

Method of producing semiconductor device

Thin film semiconductor device with oxide film on insulating layer

Method of producing a thin film semiconductor device

Vertical type MOS transistor and method of formation thereof

Semiconductor device having metal silicide film and manufacturing method thereof

Semiconductor device having metal silicide film and manufacturing method thereof

Semiconductor device having metal silicide film

Semiconductor device having an SOI structure

Semiconductor device having piezo resistance

Three-dimensional shape measuring device and three-dimensional shape measuring sensor

Thin-film SOI MOSFET

Apparatus for detecting three-dimensional configuration of object employing optical cutting method

Semiconductor memory device having substrate isolation of a switching transistor and storage capacitor

Method of manufacturing substrate having semiconductor on insulator

Method of manufacturing a semiconductor device

SOI substrate having monocrystal silicon layer on insulating film

Method of manufacturing a SOI substrate having a monocrystalline silicon layer on insulating film

Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure

Semiconductor device and method of manufacturing the same

Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor

SOI based transistor inside an insulation layer with conductive bump on the insulation layer

Semiconductor device having different field oxide sizes

Semiconductor device having a common substrate bias

Semiconductor device and method of manufacturing the same

Method of manufacturing substrate having semiconductor on insulator

Method of manufacturing a thin film SOI MOSFET

Semiconductor pressure sensor and method of fabricating the same

Wafer structure for forming a semiconductor single crystal film

Process for manufacturing stacked semiconductor devices

Apparatus and method for determining crystal orientation

KOZO IIZUKA DIRECTOR GENERAL A

Method of manufacturing a semiconductor device

Stacked semiconductor device

AGENCY IND SCIENCE TECHN

Process for producing single crystal semiconductor layer and semiconductor device produced by said process

Process for producing single crystal semiconductor layer and semiconductor device produced by said process

(unassigned)

Semiconductor device on an SOI substrate

MITSUI PETROCHEMICAL IND

Knowledge base management system for an information reasoning apparatus

PANASONIC CORP

Lighting system and lighting control device equipped for the lighting system

KAWASHIMA AKIHIRO

Structure of mounting impact absorption material for use with vehicle

MITSUBISHI CHEM CORP

Polycarbonate resin with a reduced volatile chlorine content and process for producing the same