Inventor

LEE RUOJIA

US42 patents

Patents

42 patents

US5250450AOct 5, 1993

Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance

MICRON TECHNOLOGY INC166 citations99

US5241496AAug 31, 1993

Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells

MICRON TECHNOLOGY INC262 citations99

US5122848AJun 16, 1992

Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance

MICRON TECHNOLOGY INC263 citations99

US5013680AMay 7, 1991

Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography

MICRON TECHNOLOGY INC461 citations99

US5331196AJul 19, 1994

Process for creating field effect transistors having reduced-slope, staircase-profile sidewall spacers

MICRON TECHNOLOGY INC58 citations96

US5286993AFeb 15, 1994

One-sided ozone TEOS spacer

MICRON TECHNOLOGY INC35 citations93

US5257238AOct 26, 1993

Dynamic memory having access transistor turn-off state

MICRON TECHNOLOGY INC35 citations93

US5240796AAug 31, 1993

Method of fabricating a chromeless phase shift reticle

MICRON TECHNOLOGY INC47 citations93

US5241206AAug 31, 1993

Self-aligned vertical intrinsic resistance

MICRON TECHNOLOGY INC36 citations93

US5208176AMay 4, 1993

Method of fabricating an enhanced dynamic random access memory (DRAM) cell capacitor using multiple polysilicon texturization

MICRON TECHNOLOGY INC40 citations93

US5196364AMar 23, 1993

Method of making a stacked capacitor dram cell

MICRON TECHNOLOGY INC22 citations93

US5192872AMar 9, 1993

Cell structure for erasable programmable read-only memories

MICRON TECHNOLOGY INC29 citations93

US5155057AOct 13, 1992

Stacked v-cell capacitor using a disposable composite dielectric on top of a digit line

MICRON TECHNOLOGY INC23 citations93

US5149665ASep 22, 1992

Conductive source line for high density programmable read-only memory applications

MICRON TECHNOLOGY INC43 citations93

US5089867AFeb 18, 1992

High control gate/floating gate coupling for EPROMs, E2 PROMs, and Flash E2 PROMs

MICRON TECHNOLOGY INC39 citations93

US5077225ADec 31, 1991

Process for fabricating a stacked capacitor within a monolithic integrated circuit using oxygen implantation

MICRON TECHNOLOGY INC34 citations93

US5069747ADec 3, 1991

Creation and removal of temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on exposed, permanent silicon dioxide structures

MICRON TECHNOLOGY INC41 citations93

US5023190AJun 11, 1991

CMOS processes

MICRON TECHNOLOGY INC39 citations93

US4924119AMay 8, 1990

Electrically programmable erasable inverter device with deprogramming limitation

MICRON TECHNOLOGY INC27 citations93

US5371701ADec 6, 1994

Stacked delta cell capacitor

MICRON TECHNOLOGY INC43 citations92

US5026657AJun 25, 1991

Split-polysilicon CMOS DRAM process incorporating self-aligned silicidation of the cell plate, transistor gates, and N+ regions

MICRON TECHNOLOGY INC33 citations92

US5321285AJun 14, 1994

Carrier injection dynamic random access memory having stacked depletion region in Mesa

MICRON TECHNOLOGY INC38 citations91

US5227321AJul 13, 1993

Method for forming MOS transistors

MICRON TECHNOLOGY INC43 citations89

US5024961AJun 18, 1991

Blanket punchthrough and field-isolation implant for sub-micron N-channel CMOS devices

MICRON TECHNOLOGY INC36 citations87

US6787428B2Sep 7, 2004

Aluminum-filled self-aligned trench for stacked capacitor structure and methods

MICRON TECHNOLOGY INC11 citations82

US5321648AJun 14, 1994

Stacked V-cell capacitor using a disposable outer digit line spacer

MICRON TECHNOLOGY INC17 citations82

US5321649AJun 14, 1994

Stacked delta cell capacitor

MICRON TECHNOLOGY INC10 citations74

US5266513ANov 30, 1993

Method of making stacked W-cell capacitor

MICRON TECHNOLOGY INC15 citations74

US5236855AAug 17, 1993

Stacked V-cell capacitor using a disposable outer digit line spacer

MICRON TECHNOLOGY INC11 citations74

US5219778AJun 15, 1993

Stacked V-cell capacitor

MICRON TECHNOLOGY INC10 citations74

US5066606ANov 19, 1991

Implant method for advanced stacked capacitors

MICRON TECHNOLOGY INC9 citations74

US7057285B2Jun 6, 2006

Aluminum interconnects with metal silicide diffusion barriers

MICRON TECHNOLOGY INC5 citations73

US6720605B1Apr 13, 2004

Aluminum-filled self-aligned trench for stacked capacitor structure and methods

MICRON TECHNOLOGY INC6 citations73

US6465319B1Oct 15, 2002

Aluminum-filled self-aligned trench for stacked capacitor structure and methods

MICRON TECHNOLOGY INC4 citations73

US6165863ADec 26, 2000

Aluminum-filled self-aligned trench for stacked capacitor structure and methods

MICRON TECHNOLOGY INC6 citations73

USRE35828EJun 23, 1998

Anti-fuse circuit and method wherein the read operation and programming operation are reversed

MICRON TECHNOLOGY INC1 citations52

LEE RUOJIA

Patents

Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance

Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells

Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance

Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography

One-time, voltage-programmable, logic element

High performance sub-micron p-channel transistor with germanium implant

Reverse polysilicon CMOS fabrication

Method of making self-aligned vertical intrinsic resistance

Method of making memory devices utilizing one-sided ozone teos spacers

Stacked capacitor doping technique making use of rugged polysilicon

Process for creating field effect transistors having reduced-slope, staircase-profile sidewall spacers

One-sided ozone TEOS spacer

Dynamic memory having access transistor turn-off state

Method of fabricating a chromeless phase shift reticle

Self-aligned vertical intrinsic resistance

Method of fabricating an enhanced dynamic random access memory (DRAM) cell capacitor using multiple polysilicon texturization

Method of making a stacked capacitor dram cell

Cell structure for erasable programmable read-only memories

Stacked v-cell capacitor using a disposable composite dielectric on top of a digit line

Conductive source line for high density programmable read-only memory applications

High control gate/floating gate coupling for EPROMs, E2 PROMs, and Flash E2 PROMs

Process for fabricating a stacked capacitor within a monolithic integrated circuit using oxygen implantation

Creation and removal of temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on exposed, permanent silicon dioxide structures

CMOS processes

Electrically programmable erasable inverter device with deprogramming limitation

Stacked delta cell capacitor

Split-polysilicon CMOS DRAM process incorporating self-aligned silicidation of the cell plate, transistor gates, and N+ regions

Carrier injection dynamic random access memory having stacked depletion region in Mesa

Method for forming MOS transistors

Blanket punchthrough and field-isolation implant for sub-micron N-channel CMOS devices

Aluminum-filled self-aligned trench for stacked capacitor structure and methods

Stacked V-cell capacitor using a disposable outer digit line spacer

Stacked delta cell capacitor

Method of making stacked W-cell capacitor

Stacked V-cell capacitor using a disposable outer digit line spacer

Stacked V-cell capacitor

Implant method for advanced stacked capacitors

Aluminum interconnects with metal silicide diffusion barriers

Aluminum-filled self-aligned trench for stacked capacitor structure and methods

Aluminum-filled self-aligned trench for stacked capacitor structure and methods

Aluminum-filled self-aligned trench for stacked capacitor structure and methods

Anti-fuse circuit and method wherein the read operation and programming operation are reversed