P

Inventor

TOKUNOH FUTOSHI

JP19 patents
⚠️ This page may combine multiple inventors who share the name “TOKUNOH FUTOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

18 patents
US5543363AAug 6, 1996

Process for adhesively attaching a semiconductor device to an electrode plate

MITSUBISHI ELECTRIC CORP28 citations92
US5371386ADec 6, 1994

Semiconductor device and method of assembling the same

MITSUBISHI ELECTRIC CORP22 citations92
US4881118ANov 14, 1989

Semiconductor device

MITSUBISHI ELECTRIC CORP35 citations91
US4719500AJan 12, 1988

Semiconductor device and a process of producing same

MITSUBISHI ELECTRIC CORP18 citations81
US6465881B1Oct 15, 2002

Compression bonded type semiconductor device

MITSUBISHI ELECTRIC CORP9 citations73
US5281847AJan 25, 1994

Groove structure for isolating elements comprising a GTO structure

MITSUBISHI ELECTRIC CORP6 citations73
US5047836ASep 10, 1991

Temperature compensating contact to avoid misregistration

MITSUBISHI ELECTRIC CORP10 citations73
US5393995AFeb 28, 1995

Semiconductor thyristor device with recess

MITSUBISHI ELECTRIC CORP15 citations71
US6020603AFeb 1, 2000

Semiconductor device with a beveled and chamfered outer peripheral portion

MITSUBISHI ELECTRIC CORP13 citations69
US5047824ASep 10, 1991

Reverse conducting gate turn-off thyristor

MITSUBISHI ELECTRIC CORP5 citations63
US5640024AJun 17, 1997

Compression-type power semiconductor device

MITSUBISHI ELECTRIC CORP2 citations62
US5346849ASep 13, 1994

Method of making a groove structure for isolation between elements comprising a GTO thyristor

MITSUBISHI ELECTRIC CORP4 citations62
US5189509AFeb 23, 1993

Semiconductor device and electrode block for the same

MITSUBISHI ELECTRIC CORP2 citations62
US5574297ANov 12, 1996

Gate turnoff thyristor with reduced gate trigger current

MITSUBISHI ELECTRIC CORP5 citations56
US5082800AJan 21, 1992

Method of forming pattern in manufacturing semiconductor device

MITSUBISHI ELECTRIC CORP2 citations53
US7221047B2May 22, 2007

Pressure-contact type semiconductor device

MITSUBISHI ELECTRIC CORP0 citations51
US6995464B2Feb 7, 2006

Pressure-contact type semiconductor device

MITSUBISHI ELECTRIC CORP0 citations51
US5428230AJun 27, 1995

Reverse conducting gate turn-off thyristor

MITSUBISHI ELECTRIC CORP0 citations41

MITSUBISHI KENKI

1 patent