Inventor
TOKUNOH FUTOSHI
JP19 patents
⚠️ This page may combine multiple inventors who share the name “TOKUNOH FUTOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
18 patentsUS5543363AAug 6, 1996
Process for adhesively attaching a semiconductor device to an electrode plate
MITSUBISHI ELECTRIC CORP28 citations92
US5371386ADec 6, 1994
Semiconductor device and method of assembling the same
MITSUBISHI ELECTRIC CORP22 citations92
US4881118ANov 14, 1989
Semiconductor device
MITSUBISHI ELECTRIC CORP35 citations91
US4719500AJan 12, 1988
Semiconductor device and a process of producing same
MITSUBISHI ELECTRIC CORP18 citations81
US6465881B1Oct 15, 2002
Compression bonded type semiconductor device
MITSUBISHI ELECTRIC CORP9 citations73
US5281847AJan 25, 1994
Groove structure for isolating elements comprising a GTO structure
MITSUBISHI ELECTRIC CORP6 citations73
US5047836ASep 10, 1991
Temperature compensating contact to avoid misregistration
MITSUBISHI ELECTRIC CORP10 citations73
US5393995AFeb 28, 1995
Semiconductor thyristor device with recess
MITSUBISHI ELECTRIC CORP15 citations71
US6020603AFeb 1, 2000
Semiconductor device with a beveled and chamfered outer peripheral portion
MITSUBISHI ELECTRIC CORP13 citations69
US5047824ASep 10, 1991
Reverse conducting gate turn-off thyristor
MITSUBISHI ELECTRIC CORP5 citations63
US5640024AJun 17, 1997
Compression-type power semiconductor device
MITSUBISHI ELECTRIC CORP2 citations62
US5346849ASep 13, 1994
Method of making a groove structure for isolation between elements comprising a GTO thyristor
MITSUBISHI ELECTRIC CORP4 citations62
US5189509AFeb 23, 1993
Semiconductor device and electrode block for the same
MITSUBISHI ELECTRIC CORP2 citations62
US5574297ANov 12, 1996
Gate turnoff thyristor with reduced gate trigger current
MITSUBISHI ELECTRIC CORP5 citations56
US5082800AJan 21, 1992
Method of forming pattern in manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP2 citations53
US7221047B2May 22, 2007
Pressure-contact type semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US6995464B2Feb 7, 2006
Pressure-contact type semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US5428230AJun 27, 1995
Reverse conducting gate turn-off thyristor
MITSUBISHI ELECTRIC CORP0 citations41