P

Inventor

HANNON ROBERT

US48 patents
⚠️ This page may combine multiple inventors who share the name “HANNON ROBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

28 patents
US6261876B1Jul 17, 2001

Planar mixed SOI-bulk substrate for microelectronic applications

IBM93 citations98
US7955955B2Jun 7, 2011

Using crack arrestor for inhibiting damage from dicing and chip packaging interaction failures in back end of line structures

IBM70 citations97
US6096580AAug 1, 2000

Low programming voltage anti-fuse

IBM99 citations97
US6297127B1Oct 2, 2001

Self-aligned deep trench isolation to shallow trench isolation

IBM40 citations92
US6670675B2Dec 30, 2003

Deep trench body SOI contacts with epitaxial layer formation

IBM35 citations90
US8822141B1Sep 2, 2014

Front side wafer ID processing

IBM10 citations84
US8022543B2Sep 20, 2011

Underbump metallurgy for enhanced electromigration resistance

IBM11 citations84
US7919356B2Apr 5, 2011

Method and structure to reduce cracking in flip chip underfill

IBM8 citations84
US7375021B2May 20, 2008

Method and structure for eliminating aluminum terminal pad material in semiconductor devices

IBM10 citations84
US8658535B2Feb 25, 2014

Optimized annular copper TSV

IBM8 citations80
US5491319AFeb 13, 1996

Laser ablation apparatus and method

IBM15 citations74
US5552107ASep 3, 1996

Aluminum nitride body having graded metallurgy

IBM9 citations72
US5552232ASep 3, 1996

Aluminum nitride body having graded metallurgy

IBM4 citations72
US6004624ADec 21, 1999

Method for the controlling of certain second phases in aluminum nitride

IBM5 citations71
US5763093AJun 9, 1998

Aluminum nitride body having graded metallurgy

IBM10 citations71
US5682589AOct 28, 1997

Aluminum nitride body having graded metallurgy

IBM9 citations71
US5932043AAug 3, 1999

Method for flat firing aluminum nitride/tungsten electronic modules

IBM12 citations68
US5904868AMay 18, 1999

Mounting and/or removing of components using optical fiber tools

IBM13 citations68
US8679971B2Mar 25, 2014

Metal-contamination-free through-substrate via structure

IBM3 citations63
US7566637B2Jul 28, 2009

Method of inhibition of metal diffusion arising from laser dicing

IBM5 citations63
US6486043B1Nov 26, 2002

Method of forming dislocation filter in merged SOI and non-SOI chips

IBM4 citations62
US6200373B1Mar 13, 2001

Method for controlling of certain second phases in aluminum nitride

IBM3 citations60
US5742021AApr 21, 1998

High thermal conductivity substrate and the method of brazing a cap thereto

IBM3 citations58
US10170337B2Jan 1, 2019

Implant after through-silicon via (TSV) etch to getter mobile ions

IBM0 citations52
US8372725B2Feb 12, 2013

Structures and methods of forming pre fabricated deep trench capacitors for SOI substrates

IBM0 citations52
US6353246B1Mar 5, 2002

Semiconductor device including dislocation in merged SOI/DRAM chips

IBM0 citations52
US7674690B2Mar 9, 2010

Inhibition of metal diffusion arising from laser dicing

IBM0 citations50
US6306528B1Oct 23, 2001

Method for the controlling of certain second phases in aluminum nitride

IBM0 citations50

FAROOQ MUKTA G

12 patents
US8129256B2Mar 6, 2012

3D integrated circuit device fabrication with precisely controllable substrate removal

FAROOQ MUKTA G254 citations99
US8492878B2Jul 23, 2013

Metal-contamination-free through-substrate via structure

FAROOQ MUKTA G21 citations93
US9406561B2Aug 2, 2016

Three dimensional integrated circuit integration using dielectric bonding first and through via formation last

FAROOQ MUKTA G19 citations84
US8546961B2Oct 1, 2013

Alignment marks to enable 3D integration

FAROOQ MUKTA G9 citations84
US8492869B2Jul 23, 2013

3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer

FAROOQ MUKTA G5 citations84
US8298914B2Oct 30, 2012

3D integrated circuit device fabrication using interface wafer as permanent carrier

FAROOQ MUKTA G7 citations84
US8664081B2Mar 4, 2014

Method for fabricating 3D integrated circuit device using interface wafer as permanent carrier

FAROOQ MUKTA G2 citations63
US8629553B2Jan 14, 2014

3D integrated circuit device fabrication with precisely controllable substrate removal

FAROOQ MUKTA G1 citations63
US8399336B2Mar 19, 2013

Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer

FAROOQ MUKTA G2 citations63
US8962448B2Feb 24, 2015

Computer readable medium encoded with a program for fabricating 3D integrated circuit device using interface wafer as permanent carrier

FAROOQ MUKTA G0 citations52
US8738167B2May 27, 2014

3D integrated circuit device fabrication with precisely controllable substrate removal

FAROOQ MUKTA G0 citations52
US8455270B2Jun 4, 2013

3D multiple die stacking

FAROOQ MUKTA G1 citations52

BOSTON SCIENT SCIMED INC

4 patents

LANE MICHAEL W

1 patent

BOOTH JR ROGER A

1 patent

ANDRY PAUL S

1 patent

(unassigned)

1 patent