P

Inventor

NOMOTO KAZUMASA

JP35 patents
⚠️ This page may combine multiple inventors who share the name “NOMOTO KAZUMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONY CORP

32 patents
US6906390B2Jun 14, 2005

Nonvolatile semiconductor storage and method for manufacturing the same

SONY CORP88 citations97
US6891262B2May 10, 2005

Semiconductor device and method of producing the same

SONY CORP47 citations96
US6885060B2Apr 26, 2005

Non-volatile semiconductor memory device and process for fabricating the same

SONY CORP49 citations96
US6285055B1Sep 4, 2001

Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device

SONY CORP71 citations96
US7034356B2Apr 25, 2006

Non-volatile semiconductor memory device and process for fabricating the same

SONY CORP12 citations93
US7259433B2Aug 21, 2007

Non-volatile semiconductor memory device and method for producing same

SONY CORP18 citations92
US6525379B2Feb 25, 2003

Memory device, method of manufacturing the same, and integrated circuit

SONY CORP26 citations92
US6376290B1Apr 23, 2002

Method of forming a semiconductor thin film on a plastic substrate

SONY CORP37 citations92
US6133603AOct 17, 2000

Memory device and memory array

SONY CORP27 citations92
US6080995AJun 27, 2000

Quantum device

SONY CORP28 citations92
US5440148AAug 8, 1995

Quantum operational device

SONY CORP24 citations92
US7863600B2Jan 4, 2011

Field-effect transistor

SONY CORP9 citations84
US7227255B2Jun 5, 2007

Semiconductor device and method of producing the same

SONY CORP10 citations84
US7199303B2Apr 3, 2007

Optical energy conversion apparatus

SONY CORP8 citations74
US7049180B2May 23, 2006

Method of fabricating a memory transistor array utilizing insulated word lines as gate electrodes

SONY CORP9 citations74
US7038271B2May 2, 2006

Non-volatile semiconductor memory device and process for fabricating the same

SONY CORP5 citations74
US6794673B2Sep 21, 2004

Plastic substrate for a semiconductor thin film

SONY CORP12 citations74
US6274903B1Aug 14, 2001

Memory device having a storage region is constructed with a plurality of dispersed particulates

SONY CORP8 citations74
US5512762AApr 30, 1996

Quantum device with plural stable states

SONY CORP9 citations74
US5643828AJul 1, 1997

Manufacturing method of a quantum device

SONY CORP11 citations73
US7718465B2May 18, 2010

Semiconductor device and process for producing same

SONY CORP2 citations63
US7074675B2Jul 11, 2006

Non-volatile semiconductor memory device and process for fabricating the same

SONY CORP2 citations63
US6645837B2Nov 11, 2003

Method of manufacturing semiconductor device

SONY CORP3 citations63
US6461917B2Oct 8, 2002

Memory device, manufacturing method thereof and integrated circuit thereof

SONY CORP2 citations63
US6320216B1Nov 20, 2001

Memory device with barrier portions having defined capacitance

SONY CORP2 citations63
US6963107B2Nov 8, 2005

Nonvolatile semiconductor memory apparatus and the operation method

SONY CORP6 citations62
US11993094B2May 28, 2024

Reversible recording medium and exterior member

SONY CORP0 citations61
US8350255B2Jan 8, 2013

Thin film transistor and method for manufacturing thin film transistor

SONY CORP1 citations52
US7057233B2Jun 6, 2006

Non-volatile semiconductor memory device and process for fabricating the same

SONY CORP0 citations52
US7049655B2May 23, 2006

Non-volatile semiconductor memory device and process for fabricating the same

SONY CORP0 citations52
US7012329B2Mar 14, 2006

Memory transistor array utilizing insulated word lines as gate electrodes

SONY CORP0 citations52
US7985694B2Jul 26, 2011

Method for forming pattern, method for manufacturing semiconductor device and semiconductor device

SONY CORP0 citations41

NOMOTO KAZUMASA

2 patents

KAWASHIMA NORIYUKI

1 patent