Inventor
ISHIKAWA HIRAKU
JP26 patents
⚠️ This page may combine multiple inventors who share the name “ISHIKAWA HIRAKU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
13 patentsUS6277706B1Aug 21, 2001
Method of manufacturing isolation trenches using silicon nitride liner
NEC CORP122 citations98
US5894170AApr 13, 1999
Wiring layer in semiconductor device
NEC CORP55 citations96
US5587344ADec 24, 1996
Method for fabricating an oxynitride film for use in a semiconductor device
NEC CORP61 citations96
US6319847B1Nov 20, 2001
Semiconductor device using a thermal treatment of the device in a pressurized steam ambient as a planarization technique
NEC CORP20 citations92
US6239016B1May 29, 2001
Multilevel interconnection in a semiconductor device and method for forming the same
NEC CORP26 citations92
US6157083ADec 5, 2000
Fluorine doping concentrations in a multi-structure semiconductor device
NEC CORP21 citations92
US5861674AJan 19, 1999
Multilevel interconnection in a semiconductor device and method for forming the same
NEC CORP29 citations92
US5751050AMay 12, 1998
Semiconductor device having a polysilicon resistor element with increased stability and method of fabricating same
NEC CORP48 citations92
US5723386AMar 3, 1998
Method of manufacturing a semiconductor device capable of rapidly forming minute wirings without etching of the minute wirings
NEC CORP22 citations92
US5633208AMay 27, 1997
Planarization of insulation film using low wettingness surface
NEC CORP39 citations92
US6528410B1Mar 4, 2003
Method for manufacturing semiconductor device
NEC CORP8 citations74
US6071832AJun 6, 2000
Method for manufacturing a reliable semiconductor device using ECR-CVD and implanting hydrogen ions into an active region
NEC CORP10 citations74
US5882975AMar 16, 1999
Method of fabricating salicide-structure semiconductor device
NEC CORP9 citations74
TOKYO ELECTRON LTD
7 patentsUS7658799B2Feb 9, 2010
Plasma film-forming apparatus and plasma film-forming method
TOKYO ELECTRON LTD127 citations98
US6716725B1Apr 6, 2004
Plasma processing method and semiconductor device
TOKYO ELECTRON LTD9 citations74
US10388524B2Aug 20, 2019
Film forming method, boron film, and film forming apparatus
TOKYO ELECTRON LTD2 citations71
US8377818B2Feb 19, 2013
Aftertreatment method for amorphous carbon film
TOKYO ELECTRON LTD2 citations63
US8017519B2Sep 13, 2011
Semiconductor device and manufacturing method thereof
TOKYO ELECTRON LTD6 citations63
US7842356B2Nov 30, 2010
Substrate processing methods
TOKYO ELECTRON LTD3 citations63
US8674397B2Mar 18, 2014
Sealing film forming method, sealing film forming device, and light-emitting device
TOKYO ELECTRON LTD0 citations52
ISHIKAWA HIRAKU
6 patentsUS8741396B2Jun 3, 2014
Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film, method for manufacturing semiconductor device, and storage medium in which control program is stored
ISHIKAWA HIRAKU5 citations72
US8262844B2Sep 11, 2012
Plasma processing apparatus, plasma processing method and storage medium
ISHIKAWA HIRAKU3 citations60
US8936829B2Jan 20, 2015
Method of aftertreatment of amorphous hydrocarbon film and method for manufacturing electronic device by using the aftertreatment method
ISHIKAWA HIRAKU0 citations51
US8809207B2Aug 19, 2014
Pattern-forming method and method for manufacturing semiconductor device
ISHIKAWA HIRAKU0 citations51
US8461047B2Jun 11, 2013
Method for processing amorphous carbon film, and semiconductor device manufacturing method using the method
ISHIKAWA HIRAKU1 citations51
US8409460B2Apr 2, 2013
Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium
ISHIKAWA HIRAKU1 citations44