Inventor
ISHII TATSUYA
JP152 patents
⚠️ This page may combine multiple inventors who share the name “ISHII TATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
14 patentsUS6683811B2Jan 27, 2004
Nonvolatile memory system, semiconductor memory, and writing method
HITACHI LTD83 citations99
US6567311B2May 20, 2003
Nonvolatile memory system, semiconductor memory, and writing method
HITACHI LTD81 citations99
US6157573ADec 5, 2000
Nonvolatile memory system, semiconductor memory, and writing method
HITACHI LTD90 citations99
US5982668ANov 9, 1999
Nonvolatile memory system, semiconductor memory and writing method
HITACHI LTD92 citations99
US5867428AFeb 2, 1999
Nonvolatile memory system semiconductor memory and writing method
HITACHI LTD98 citations99
US6452838B1Sep 17, 2002
Nonvolatile memory system, semiconductor memory and writing method
HITACHI LTD62 citations97
US6385092B1May 7, 2002
Nonvolatile memory system, semiconductor memory, and writing method
HITACHI LTD61 citations97
US6023425AFeb 8, 2000
Nonvolatile memory system, semiconductor memory, and writing method
HITACHI LTD80 citations97
US6473321B2Oct 29, 2002
Semiconductor integrated circuit and nonvolatile semiconductor memory
HITACHI LTD67 citations96
US6009016ADec 28, 1999
Nonvolatile memory system semiconductor memory and writing method
HITACHI LTD71 citations96
US5675172AOct 7, 1997
Metal-insulator-semiconductor device having reduced threshold voltage and high mobility for high speed/low-voltage operation
HITACHI LTD85 citations96
US5359221AOct 25, 1994
Semiconductor device
HITACHI LTD107 citations96
US6243313B1Jun 5, 2001
Semiconductor memory device, nonvolatile semiconductor memory device, and their data reading method
HITACHI LTD27 citations93
US6226212B1May 1, 2001
Semiconductor memory device, nonvolatile semiconductor memory device, and their data reading method
HITACHI LTD24 citations93
MITSUBISHI ELECTRIC CORP
13 patentsUS5493236AFeb 20, 1996
Test analysis apparatus and analysis method for semiconductor wafer using OBIC analysis
MITSUBISHI ELECTRIC CORP334 citations96
US5112771AMay 12, 1992
Method of fibricating a semiconductor device having a trench
MITSUBISHI ELECTRIC CORP90 citations96
US5334540AAug 2, 1994
OBIC observation method and apparatus therefor
MITSUBISHI ELECTRIC CORP40 citations93
US5250831AOct 5, 1993
DRAM device having a memory cell array of a divided bit line type
MITSUBISHI ELECTRIC CORP34 citations93
US5243209ASep 7, 1993
Semiconductor memory device including junction field effect transistor and capacitor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP41 citations93
US5393998AFeb 28, 1995
Semiconductor memory device containing junction field effect transistor
MITSUBISHI ELECTRIC CORP45 citations92
US4985368AJan 15, 1991
Method for making semiconductor device with no stress generated at the trench corner portion
MITSUBISHI ELECTRIC CORP24 citations92
US4894695AJan 16, 1990
Semiconductor device with no stress generated at the trench corner portion and the method for making the same
MITSUBISHI ELECTRIC CORP27 citations92
US5389873AFeb 14, 1995
Pressure contact chip and wafer testing device
MITSUBISHI ELECTRIC CORP53 citations91
US5463235AOct 31, 1995
Semiconductor memory comprising a memory cell without a transistor
MITSUBISHI ELECTRIC CORP17 citations74
US5010379AApr 23, 1991
Semiconductor memory device with two storage nodes
MITSUBISHI ELECTRIC CORP11 citations74
US4970580ANov 13, 1990
Semiconductor memory device having protruding cell configuration
MITSUBISHI ELECTRIC CORP10 citations74
US4884121ANov 28, 1989
Semiconductor device
MITSUBISHI ELECTRIC CORP9 citations74
RENESAS TECH CORP
9 patentsUS6873552B2Mar 29, 2005
Nonvolatile memory system, semiconductor memory, and writing method
RENESAS TECH CORP79 citations99
US7405979B2Jul 29, 2008
Nonvolatile memory system, semiconductor memory, and writing method
RENESAS TECH CORP52 citations97
US7283399B2Oct 16, 2007
Nonvolatile memory system, semiconductor memory, and writing method
RENESAS TECH CORP53 citations97
US6788575B2Sep 7, 2004
Nonvolatile memory
RENESAS TECH CORP44 citations96
US7366034B2Apr 29, 2008
Nonvolatile memory
RENESAS TECH CORP14 citations92
US7012845B2Mar 14, 2006
Nonvolatile memory with control circuit adapted to distinguish between command signal interface specifications and having an error correction function
RENESAS TECH CORP16 citations92
US6868032B2Mar 15, 2005
Nonvolatile memory
RENESAS TECH CORP12 citations92
US7525852B2Apr 28, 2009
Nonvolatile memory
RENESAS TECH CORP4 citations74
US7230859B2Jun 12, 2007
Nonvolatile memory
RENESAS TECH CORP6 citations74
HITACHI ULSI ENG CORP
2 patentsRENESAS ELECTRONICS CORP
2 patents(unassigned)
1 patentTDK CORP
1 patentTOSHIBA CERAMICS CO
1 patentSEIKO EPSON CORP
1 patentAKAI AKIHITO
1 patentBROTHER IND LTD
1 patentNAT AEROSPACE LAB
1 patentNEC CORP
1 patentNSK LTD
1 patentSYNAPTICS JAPAN GK
1 patentShowing the top 50 of 152 patents by PatentIndex Score.