Inventor
CHENG WEN-KUNG
TW13 patents
⚠️ This page may combine multiple inventors who share the name “CHENG WEN-KUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
12 patentsUS6136680AOct 24, 2000
Methods to improve copper-fluorinated silica glass interconnects
TAIWAN SEMICONDUCTOR MFG133 citations97
US6660638B1Dec 9, 2003
CMP process leaving no residual oxide layer or slurry particles
TAIWAN SEMICONDUCTOR MFG13 citations91
US6235653B1May 22, 2001
Ar-based si-rich oxynitride film for dual damascene and/or contact etch stop layer
TAIWAN SEMICONDUCTOR MFG24 citations91
US6584987B1Jul 1, 2003
Method for improved cleaning in HDP-CVD process with reduced NF3 usage
TAIWAN SEMICONDUCTOR MFG31 citations90
US6713407B1Mar 30, 2004
Method of forming a metal nitride layer over exposed copper
TAIWAN SEMICONDUCTOR MFG37 citations88
US6558228B1May 6, 2003
Method of unloading substrates in chemical-mechanical polishing apparatus
TAIWAN SEMICONDUCTOR MFG11 citations69
US7125802B2Oct 24, 2006
CMP process leaving no residual oxide layer or slurry particles
TAIWAN SEMICONDUCTOR MFG3 citations61
US6499222B1Dec 31, 2002
Template for measuring edge width and method of using
TAIWAN SEMICONDUCTOR MFG5 citations60
US6602560B2Aug 5, 2003
Method for removing residual fluorine in HDP-CVD chamber
TAIWAN SEMICONDUCTOR MFG2 citations58
US6323141B1Nov 27, 2001
Method for forming anti-reflective coating layer with enhanced film thickness uniformity
TAIWAN SEMICONDUCTOR MFG5 citations58
US6903019B2Jun 7, 2005
CMP process leaving no residual oxide layer or slurry particles
TAIWAN SEMICONDUCTOR MFG0 citations51
US7772625B2Aug 10, 2010
Image sensor having an RPO layer containing nitrogen
TAIWAN SEMICONDUCTOR MFG1 citations47