P

Inventor

UMEZAWA NAOTO

JP5 patents
⚠️ This page may combine multiple inventors who share the name “UMEZAWA NAOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

3 patents
US12453162B2Oct 21, 2025

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations59
US11329137B2May 10, 2022

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations59
US12181799B2Dec 31, 2024

Resist compositions and semiconductor fabrication methods using the same

SAMSUNG ELECTRONICS CO LTD0 citations42

UMEZAWA NAOTO

1 patent
US8575038B2Nov 5, 2013

Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film

UMEZAWA NAOTO4 citations55

NAT INST FOR MATERIALS SCIENCE

1 patent
US8759925B2Jun 24, 2014

Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film

NAT INST FOR MATERIALS SCIENCE1 citations49