Inventor
PARK YOUNG-WOOK
KR66 patents
⚠️ This page may combine multiple inventors who share the name “PARK YOUNG-WOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
47 patentsUS6468924B2Oct 22, 2002
Methods of forming thin films by atomic layer deposition
SAMSUNG ELECTRONICS CO LTD930 citations99
US6391803B1May 21, 2002
Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
SAMSUNG ELECTRONICS CO LTD964 citations99
US6828218B2Dec 7, 2004
Method of forming a thin film using atomic layer deposition
SAMSUNG ELECTRONICS CO LTD96 citations98
US6576053B1Jun 10, 2003
Method of forming thin film using atomic layer deposition method
SAMSUNG ELECTRONICS CO LTD297 citations98
US6218260B1Apr 17, 2001
Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD76 citations95
US5910218AJun 8, 1999
Systems for forming films having high dielectric constants
SAMSUNG ELECTRONICS CO LTD56 citations95
US6700153B2Mar 2, 2004
One-cylinder stack capacitor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD32 citations93
US6221742B1Apr 24, 2001
Method for fabricating polysilicon film for semiconductor device
SAMSUNG ELECTRONICS CO LTD23 citations93
US6039811AMar 21, 2000
Apparatus for fabricating polysilicon film for semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations93
US5721153AFeb 24, 1998
Method of making capacitor of highly integrated semiconductor device using multiple insulation layers
SAMSUNG ELECTRONICS CO LTD22 citations93
US5591671AJan 7, 1997
Method for interconnecting layers in semiconductor device
SAMSUNG ELECTRONICS CO LTD21 citations93
US7481882B2Jan 27, 2009
Method for forming a thin film
SAMSUNG ELECTRONICS CO LTD34 citations92
US6207489B1Mar 27, 2001
Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film
SAMSUNG ELECTRONICS CO LTD35 citations92
US6136641AOct 24, 2000
Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere
SAMSUNG ELECTRONICS CO LTD39 citations92
US5939131AAug 17, 1999
Methods for forming capacitors including rapid thermal oxidation
SAMSUNG ELECTRONICS CO LTD30 citations92
US5622889AApr 22, 1997
High capacitance capacitor manufacturing method
SAMSUNG ELECTRONICS CO LTD27 citations92
US7509501B2Mar 24, 2009
Cryptographic apparatus for supporting multiple modes
SAMSUNG ELECTRONICS CO LTD35 citations91
US6133148AOct 17, 2000
Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method
SAMSUNG ELECTRONICS CO LTD36 citations89
US6911364B2Jun 28, 2005
One-cylinder stack capacitor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US6680251B2Jan 20, 2004
Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters
SAMSUNG ELECTRONICS CO LTD16 citations84
US6077573AJun 20, 2000
Plasma enhanced chemical vapor deposition methods of forming hemispherical grained silicon layers
SAMSUNG ELECTRONICS CO LTD18 citations84
US5960281ASep 28, 1999
Methods of fabricating microelectronic electrode structures using hemispherical grained (HSG) silicon
SAMSUNG ELECTRONICS CO LTD17 citations84
US6426308B1Jul 30, 2002
Methods for forming films having high dielectric constants
SAMSUNG ELECTRONICS CO LTD15 citations83
US10115640B2Oct 30, 2018
Method of manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD7 citations80
US7273822B2Sep 25, 2007
Methods and apparatus for forming thin films for semiconductor devices
SAMSUNG ELECTRONICS CO LTD9 citations74
US6953744B2Oct 11, 2005
Methods of fabricating integrated circuit devices providing improved short prevention
SAMSUNG ELECTRONICS CO LTD8 citations74
US6833310B2Dec 21, 2004
Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6806183B2Oct 19, 2004
Methods for forming capacitors on semiconductor substrates
SAMSUNG ELECTRONICS CO LTD10 citations74
US6720275B2Apr 13, 2004
Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure
SAMSUNG ELECTRONICS CO LTD6 citations74
US6680511B2Jan 20, 2004
Integrated circuit devices providing improved short prevention
SAMSUNG ELECTRONICS CO LTD9 citations74
US6653155B2Nov 25, 2003
Integrated circuit devices including a resistor pattern and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US6555394B2Apr 29, 2003
Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure
SAMSUNG ELECTRONICS CO LTD8 citations74
US6416584B1Jul 9, 2002
Apparatus for forming a film on a substrate
SAMSUNG ELECTRONICS CO LTD11 citations74
US6194263B1Feb 27, 2001
Methods for forming capacitor structures including etching pits
SAMSUNG ELECTRONICS CO LTD11 citations74
US6087226AJul 11, 2000
Methods of forming capacitors including electrodes with hemispherical grained silicon layers on sidewalls thereof and related structures
SAMSUNG ELECTRONICS CO LTD13 citations74
US6004858ADec 21, 1999
Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers
SAMSUNG ELECTRONICS CO LTD10 citations74
US5943570AAug 24, 1999
Methods of forming capacitor electrodes containing HSG semiconductor layers therein
SAMSUNG ELECTRONICS CO LTD12 citations74
US9716128B2Jul 25, 2017
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US7129174B2Oct 31, 2006
Methods of fabricating a semiconductor substrate for reducing wafer warpage
SAMSUNG ELECTRONICS CO LTD8 citations73
US6693032B2Feb 17, 2004
Method of forming a contact structure having an anchoring portion
SAMSUNG ELECTRONICS CO LTD5 citations73
US6624069B2Sep 23, 2003
Methods of forming integrated circuit capacitors having doped HSG electrodes
SAMSUNG ELECTRONICS CO LTD12 citations73
US6476489B1Nov 5, 2002
Apparatus and manufacturing method for semiconductor device adopting NA interlayer contact structure
SAMSUNG ELECTRONICS CO LTD11 citations73
US7201807B2Apr 10, 2007
Method for cleaning a deposition chamber and deposition apparatus for performing in situ cleaning
SAMSUNG ELECTRONICS CO LTD8 citations72
US6828616B2Dec 7, 2004
Integrated circuit devices that utilize doped Poly-Si1−xGex conductive plugs as interconnects
SAMSUNG ELECTRONICS CO LTD5 citations72
US6989338B2Jan 24, 2006
Method for forming a multi-layered structure of a semiconductor device and methods for forming a capacitor and a gate insulation layer using the multi-layered structure
SAMSUNG ELECTRONICS CO LTD10 citations71
US6794263B1Sep 21, 2004
Method of manufacturing a semiconductor device including alignment mark
SAMSUNG ELECTRONICS CO LTD8 citations71
US5837605ANov 17, 1998
Manufacturing method of transistors
SAMSUNG ELECTRONICS CO LTD9 citations64
HYUNDAI MOTOR CO LTD
2 patents(unassigned)
1 patentShowing the top 50 of 66 patents by PatentIndex Score.