Inventor
MATSUMOTO JUNKO
JP25 patents
⚠️ This page may combine multiple inventors who share the name “MATSUMOTO JUNKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
15 patentsUS6721223B2Apr 13, 2004
Semiconductor memory device
RENESAS TECH CORP155 citations99
US6954103B2Oct 11, 2005
Semiconductor device having internal voltage generated stably
RENESAS TECH CORP34 citations92
US6873563B2Mar 29, 2005
Semiconductor circuit device adaptable to plurality of types of packages
RENESAS TECH CORP50 citations92
US6813210B2Nov 2, 2004
Semiconductor memory device requiring refresh operation
RENESAS TECH CORP24 citations92
US6784718B2Aug 31, 2004
Semiconductor device adaptable to a plurality of kinds of interfaces
RENESAS TECH CORP22 citations92
US6744298B2Jun 1, 2004
Semiconductor device
RENESAS TECH CORP23 citations92
US6731558B2May 4, 2004
Semiconductor device
RENESAS TECH CORP39 citations92
US6724223B2Apr 20, 2004
Semiconductor device used in two systems having different power supply voltages
RENESAS TECH CORP26 citations92
US6717460B2Apr 6, 2004
Semiconductor device
RENESAS TECH CORP26 citations92
US6714461B2Mar 30, 2004
Semiconductor device with data output circuit having slew rate adjustable
RENESAS TECH CORP21 citations92
US6697296B2Feb 24, 2004
Clock synchronous semiconductor memory device
RENESAS TECH CORP30 citations92
US6650582B2Nov 18, 2003
Semiconductor memory device
RENESAS TECH CORP17 citations84
US6724679B2Apr 20, 2004
Semiconductor memory device allowing high density structure or high performance
RENESAS TECH CORP15 citations83
US6765838B2Jul 20, 2004
Refresh control circuitry for refreshing storage data
RENESAS TECH CORP12 citations74
US6775177B2Aug 10, 2004
Semiconductor memory device switchable to twin memory cell configuration
RENESAS TECH CORP11 citations73
MITSUBISHI ELECTRIC CORP
9 patentsUS6512715B2Jan 28, 2003
Semiconductor memory device operating with low power consumption
MITSUBISHI ELECTRIC CORP72 citations96
US6625050B2Sep 23, 2003
Semiconductor memory device adaptable to various types of packages
MITSUBISHI ELECTRIC CORP59 citations95
US5881017AMar 9, 1999
Synchronous semiconductor memory device allowing fast operation in either of prefetch operation and full page mode operation
MITSUBISHI ELECTRIC CORP49 citations93
US5313431AMay 17, 1994
Multiport semiconductor memory device
MITSUBISHI ELECTRIC CORP100 citations93
US5668052ASep 16, 1997
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP37 citations92
US5315560AMay 24, 1994
Semiconductor memory device having a write per bit function in page mode
MITSUBISHI ELECTRIC CORP26 citations90
US6552959B2Apr 22, 2003
Semiconductor memory device operable for both of CAS latencies of one and more than one
MITSUBISHI ELECTRIC CORP18 citations84
US5877081AMar 2, 1999
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP14 citations73
US6346482B2Feb 12, 2002
Semiconductor device having an improved contact structure and a manufacturing method thereof
MITSUBISHI ELECTRIC CORP13 citations69