P

Inventor

LEE HI-CHOON

KR33 patents
⚠️ This page may combine multiple inventors who share the name “LEE HI-CHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US6611466B2Aug 26, 2003

Semiconductor memory device capable of adjusting the number of banks and method for adjusting the number of banks

SAMSUNG ELECTRONICS CO LTD121 citations96
US6064622AMay 16, 2000

Column select line control circuit for synchronous semiconductor memory device and associated methods

SAMSUNG ELECTRONICS CO LTD34 citations92
US6058495AMay 2, 2000

Multi-bit test circuit in semiconductor memory device and method thereof

SAMSUNG ELECTRONICS CO LTD31 citations92
US6046624AApr 4, 2000

Internal power supply generating circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD42 citations91
US7107467B2Sep 12, 2006

Semiconductor memory device having a circuit for removing noise from a power line of the memory device using a plurality of decoupling capactors

SAMSUNG ELECTRONICS CO LTD15 citations84
US6426902B1Jul 30, 2002

Semiconductor memory device having redundancy circuit capable of improving redundancy efficiency

SAMSUNG ELECTRONICS CO LTD17 citations84
US7460418B2Dec 2, 2008

Semiconductor memory device for stack package and read data skew control method thereof

SAMSUNG ELECTRONICS CO LTD10 citations83
US9685238B2Jun 20, 2017

Clock signal generation device and memory device including the same

SAMSUNG ELECTRONICS CO LTD7 citations82
US7248517B2Jul 24, 2007

Semiconductor memory device having local data line pair with delayed precharge voltage application point

SAMSUNG ELECTRONICS CO LTD10 citations82
US7800961B2Sep 21, 2010

Word line driver and semiconductor memory device having the same

SAMSUNG ELECTRONICS CO LTD9 citations76
US6928008B2Aug 9, 2005

Semiconductor memory devices with data line redundancy schemes and method therefore

SAMSUNG ELECTRONICS CO LTD10 citations74
US6122220ASep 19, 2000

Circuits and methods for generating internal signals for integrated circuits by dynamic inversion and resetting

SAMSUNG ELECTRONICS CO LTD11 citations72
US7154796B2Dec 26, 2006

Semiconductor memory device and data read and write method thereof

SAMSUNG ELECTRONICS CO LTD6 citations71
US7961535B2Jun 14, 2011

Test circuit and method for use in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7487414B2Feb 3, 2009

Parallel bit test circuits for testing semiconductor memory devices and related methods

SAMSUNG ELECTRONICS CO LTD2 citations63
US7336550B2Feb 26, 2008

Semiconductor memory device with reduced multi-row address testing

SAMSUNG ELECTRONICS CO LTD4 citations63
US6909665B2Jun 21, 2005

Semiconductor memory device having high-speed input/output architecture

SAMSUNG ELECTRONICS CO LTD3 citations63
US6798703B2Sep 28, 2004

Semiconductor memory device having improved replacement efficiency of defective word lines by redundancy word lines

SAMSUNG ELECTRONICS CO LTD5 citations63
US7755958B2Jul 13, 2010

Semiconductor memory device and method thereof

SAMSUNG ELECTRONICS CO LTD2 citations62
US7574636B2Aug 11, 2009

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations62
US7477715B2Jan 13, 2009

Delay-locked loop circuit of a semiconductor device and method of controlling the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US6870780B2Mar 22, 2005

Semiconductor memory device having improved redundancy scheme

SAMSUNG ELECTRONICS CO LTD6 citations62
US6236616B1May 22, 2001

Semiconductor memory device having data input/output line shared by a plurality of banks

SAMSUNG ELECTRONICS CO LTD5 citations62
US6785171B2Aug 31, 2004

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations61
US7420861B2Sep 2, 2008

Semiconductor memory device and data read and write method thereof

SAMSUNG ELECTRONICS CO LTD5 citations60
US8010765B2Aug 30, 2011

Semiconductor memory device and method for controlling clock latency according to reordering of burst data

SAMSUNG ELECTRONICS CO LTD0 citations51
US7969796B2Jun 28, 2011

High voltage generating circuit and semiconductor memory device having the same and method thereof

SAMSUNG ELECTRONICS CO LTD0 citations51
US7701744B2Apr 20, 2010

Method of arranging fuses in a fuse box of a semiconductor memory device and a semiconductor memory device including such an arrangement

SAMSUNG ELECTRONICS CO LTD0 citations51
US7480196B2Jan 20, 2009

Semiconductor device generating a test voltage for a wafer burn-in test and method thereof

SAMSUNG ELECTRONICS CO LTD0 citations50
US7335957B2Feb 26, 2008

Semiconductor memory integrated circuit and layout method of the same

SAMSUNG ELECTRONICS CO LTD0 citations42
US7978002B2Jul 12, 2011

Voltage boosting circuit and semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations41

CHOO CHUL-HWAN

1 patent

KWON SANG-HYUK

1 patent