Inventor

NISHIDA AKIO

JP109 patents

⚠️ This page may combine multiple inventors who share the name “NISHIDA AKIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NISHIDA AKIO

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof

Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same

Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

Bonded assembly including a semiconductor-on-insulator die and methods for making the same

Bonded die assembly using a face-to-back oxide bonding and methods for making the same

Three-dimensional device with bonded structures including a support die and methods of making the same

Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same

Three-dimensional NAND memory containing dual protrusion charge trapping regions and methods of manufacturing the same

Field effect transistors having different stress control liners and method of making the same

Three-dimensional memory device with through-stack contact via structures and method of making thereof

Three-dimensional memory device with separated source-side lines and method of making the same

Three-dimensional device with bonded structures including a support die and methods of making the same

Bonded assembly containing memory die bonded to integrated peripheral and system die and methods for making the same

Three-dimensional memory device containing drain-select-level air gap and methods of making the same

Vertical chip interposer and method of making a chip assembly containing the vertical chip interposer

Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same

Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same

Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same

Bonded assembly including a semiconductor-on-insulator die and methods for making the same

Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same

Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memory

RENESAS TECH CORP

SRAM having an improved capacitor

Semiconductor memory device using vertical-channel transistors

Semiconductor integrated circuit device and a method of manufacturing the same

Semiconductor memory device using vertical-channel transistors

Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor device

Semiconductor integrated circuit device with reduced leakage current

MURATA MANUFACTURING CO

Fly-back converter with constant pulse width and variable duty cycle using a capacitor in control circuit

Switching power supply unit and electronic apparatus using the same

Switching power supply having two or more DC outputs with switching circuit provided between the outputs

RCC power supply with remote disabling of oscillation frequency control

Switching power supply unit utilizing a voltage dropping circuit

Switching power supply unit having delay circuit for reducing switching frequency

HITACHI LTD

Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same

Semiconductor device and method of manufacturing thereof

Semiconductor device and method of manufacturing thereof

Semiconductor integrated circuit device

HITACHI ULSI SYS CO LTD

Semiconductor integrated circuit device with reduced leakage current

Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device

Semiconductor integrated circuit device with reduced leakage current

RENESAS ELECTRONICS CORP

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

SANDISK 3D LLC

Silicided bit line for reversible-resistivity memory

UBE INDUSTRIES

Process for producing metal oxide particles having a very small and uniform size

CHAKIHARA HIRAKU

Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device

UNO YOSHIYUKI

Isolated switching power supply apparatus including primary-side and secondary-side digital control circuits