Inventor
MINAMIKAWA KAZUKI
JP2 patents
Patents
2 patentsUS12588263B2Mar 24, 2026
Insulated gate bipolar transistor (IGBT) semiconductor device with reduced turn-on loss
TOSHIBA KK0 citations47
US11056557B2Jul 6, 2021
Semiconductor device including a semi-insulating layer contacting a first region at a first surface of a semiconductor layer
TOSHIBA KK0 citations46