Inventor
KAWAHARA TAKAAKI
JP31 patents
⚠️ This page may combine multiple inventors who share the name “KAWAHARA TAKAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
21 patentsUS6096133AAug 1, 2000
Chemical vapor deposition apparatus
MITSUBISHI ELECTRIC CORP409 citations99
US5776254AJul 7, 1998
Apparatus for forming thin film by chemical vapor deposition
MITSUBISHI ELECTRIC CORP132 citations99
US6470144B1Oct 22, 2002
Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby
MITSUBISHI ELECTRIC CORP66 citations96
US6312526B1Nov 6, 2001
Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device
MITSUBISHI ELECTRIC CORP45 citations96
US6101085AAug 8, 2000
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP40 citations96
US5834060ANov 10, 1998
High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film
MITSUBISHI ELECTRIC CORP62 citations96
US5760366AJun 2, 1998
Thin film forming apparatus using laser and magnetic field
MITSUBISHI ELECTRIC CORP87 citations96
US6110291AAug 29, 2000
Thin film forming apparatus using laser
MITSUBISHI ELECTRIC CORP67 citations94
US6638880B2Oct 28, 2003
Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device
MITSUBISHI ELECTRIC CORP23 citations92
US6273957B1Aug 14, 2001
Vaporizing device for CVD source materials and CVD apparatus employing the same
MITSUBISHI ELECTRIC CORP28 citations92
US6235649B1May 22, 2001
Method of forming high dielectric constant thin film and method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP16 citations92
US6179920B1Jan 30, 2001
CVD apparatus for forming thin film having high dielectric constant
MITSUBISHI ELECTRIC CORP43 citations92
US6110283AAug 29, 2000
Chemical vapor deposition apparatus
MITSUBISHI ELECTRIC CORP47 citations92
US6022811AFeb 8, 2000
Method of uniform CVD
MITSUBISHI ELECTRIC CORP28 citations89
US5669976ASep 23, 1997
CVD method and apparatus therefor
MITSUBISHI ELECTRIC CORP37 citations89
US5989635ANov 23, 1999
High dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP14 citations82
US6512885B1Jan 28, 2003
Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP9 citations74
US6117482ASep 12, 2000
Method and apparatus for monitoring CVD liquid source for forming thin film with high dielectric constant
MITSUBISHI ELECTRIC CORP8 citations74
US5882410AMar 16, 1999
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP11 citations74
US6165556ADec 26, 2000
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP1 citations63
US6448191B2Sep 10, 2002
Method of forming high dielectric constant thin film and method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
RENESAS ELECTRONICS CORP
3 patentsUS7855134B2Dec 21, 2010
Semiconductor device and manufacturing method of the same
RENESAS ELECTRONICS CORP4 citations61
US9455264B2Sep 27, 2016
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US9105739B2Aug 11, 2015
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51