P

Inventor

YUN EUN-JUNG

KR48 patents
⚠️ This page may combine multiple inventors who share the name “YUN EUN-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

40 patents
US7402483B2Jul 22, 2008

Methods of forming a multi-bridge-channel MOSFET

SAMSUNG ELECTRONICS CO LTD284 citations99
US7696032B2Apr 13, 2010

Semiconductor device including a crystal semiconductor layer, its fabrication and its operation

SAMSUNG ELECTRONICS CO LTD117 citations98
US7382018B2Jun 3, 2008

3-Dimensional flash memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD59 citations98
US7265418B2Sep 4, 2007

Semiconductor devices having field effect transistors

SAMSUNG ELECTRONICS CO LTD70 citations98
US7253060B2Aug 7, 2007

Gate-all-around type of semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD56 citations96
US7972914B2Jul 5, 2011

Semiconductor device with FinFET and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD26 citations93
US7696046B2Apr 13, 2010

Method of manufacturing a semiconductor device having a multi-channel type MOS transistor

SAMSUNG ELECTRONICS CO LTD21 citations93
US7453716B2Nov 18, 2008

Semiconductor memory device with stacked control transistors

SAMSUNG ELECTRONICS CO LTD28 citations92
US7285466B2Oct 23, 2007

Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels

SAMSUNG ELECTRONICS CO LTD28 citations92
US7122431B2Oct 17, 2006

Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions

SAMSUNG ELECTRONICS CO LTD20 citations92
US6914316B2Jul 5, 2005

Semiconductor trench isolation structure

SAMSUNG ELECTRONICS CO LTD30 citations92
US7943998B2May 17, 2011

Nonvolatile memory devices having stacked structures and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7800172B2Sep 21, 2010

Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structures

SAMSUNG ELECTRONICS CO LTD14 citations84
US7781290B2Aug 24, 2010

Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7662720B2Feb 16, 2010

3-Dimensional flash memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7473963B2Jan 6, 2009

Metal oxide semiconductor (MOS) transistors having three dimensional channels

SAMSUNG ELECTRONICS CO LTD8 citations84
US7348246B2Mar 25, 2008

Methods of fabricating non-volatile memory devices including divided charge storage structures

SAMSUNG ELECTRONICS CO LTD13 citations84
US7316968B2Jan 8, 2008

Methods of forming semiconductor devices having multiple channel MOS transistors

SAMSUNG ELECTRONICS CO LTD9 citations84
US7129541B2Oct 31, 2006

Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate

SAMSUNG ELECTRONICS CO LTD13 citations84
US7442987B2Oct 28, 2008

Non-volatile memory devices including divided charge storage structures

SAMSUNG ELECTRONICS CO LTD6 citations74
US7897463B2Mar 1, 2011

Methods of fabricating vertical twin-channel transistors

SAMSUNG ELECTRONICS CO LTD6 citations63
US7851287B2Dec 14, 2010

Method of fabricating Schottky barrier FinFET device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7821821B2Oct 26, 2010

Multibit electro-mechanical device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7803697B2Sep 28, 2010

Highly integrated semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7790494B2Sep 7, 2010

Method of fabricating a multi-bit electro-mechanical memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7791936B2Sep 7, 2010

Multibit electro-mechanical memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7768070B2Aug 3, 2010

Semiconductor devices having field effect transistors

SAMSUNG ELECTRONICS CO LTD5 citations63
US7723762B2May 25, 2010

Schottky barrier FinFET device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD3 citations63
US7719068B2May 18, 2010

Multi-bit electro-mechanical memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7709356B2May 4, 2010

Methods of forming a pattern and methods of manufacturing a memory device using the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7541645B2Jun 2, 2009

Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions

SAMSUNG ELECTRONICS CO LTD4 citations63
US7511998B2Mar 31, 2009

Non-volatile memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7285456B2Oct 23, 2007

Method of fabricating a fin field effect transistor having a plurality of protruding channels

SAMSUNG ELECTRONICS CO LTD3 citations63
US7037768B2May 2, 2006

Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivity

SAMSUNG ELECTRONICS CO LTD5 citations63
US6881637B2Apr 19, 2005

Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate

SAMSUNG ELECTRONICS CO LTD2 citations62
US7973343B2Jul 5, 2011

Multibit electro-mechanical memory device having cantilever electrodes

SAMSUNG ELECTRONICS CO LTD1 citations52
US7911011B2Mar 22, 2011

Methods of fabricating electromechanical non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US7675142B2Mar 9, 2010

Electromechanical non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US7482649B2Jan 27, 2009

Multi-bit nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD1 citations52
US7187022B2Mar 6, 2007

Semiconductor device having a multi-bridge-channel and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations52

KIM SUNG-MIN

3 patents

YUN EUN-JUNG

3 patents

KIM MIN-SANG

1 patent

ARIM SCIENCE CO

1 patent