Inventor
YUN EUN-JUNG
KR48 patents
⚠️ This page may combine multiple inventors who share the name “YUN EUN-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
40 patentsUS7402483B2Jul 22, 2008
Methods of forming a multi-bridge-channel MOSFET
SAMSUNG ELECTRONICS CO LTD284 citations99
US7696032B2Apr 13, 2010
Semiconductor device including a crystal semiconductor layer, its fabrication and its operation
SAMSUNG ELECTRONICS CO LTD117 citations98
US7382018B2Jun 3, 2008
3-Dimensional flash memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD59 citations98
US7265418B2Sep 4, 2007
Semiconductor devices having field effect transistors
SAMSUNG ELECTRONICS CO LTD70 citations98
US7253060B2Aug 7, 2007
Gate-all-around type of semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD56 citations96
US7972914B2Jul 5, 2011
Semiconductor device with FinFET and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD26 citations93
US7696046B2Apr 13, 2010
Method of manufacturing a semiconductor device having a multi-channel type MOS transistor
SAMSUNG ELECTRONICS CO LTD21 citations93
US7453716B2Nov 18, 2008
Semiconductor memory device with stacked control transistors
SAMSUNG ELECTRONICS CO LTD28 citations92
US7285466B2Oct 23, 2007
Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels
SAMSUNG ELECTRONICS CO LTD28 citations92
US7122431B2Oct 17, 2006
Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions
SAMSUNG ELECTRONICS CO LTD20 citations92
US6914316B2Jul 5, 2005
Semiconductor trench isolation structure
SAMSUNG ELECTRONICS CO LTD30 citations92
US7943998B2May 17, 2011
Nonvolatile memory devices having stacked structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7800172B2Sep 21, 2010
Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structures
SAMSUNG ELECTRONICS CO LTD14 citations84
US7781290B2Aug 24, 2010
Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7662720B2Feb 16, 2010
3-Dimensional flash memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7473963B2Jan 6, 2009
Metal oxide semiconductor (MOS) transistors having three dimensional channels
SAMSUNG ELECTRONICS CO LTD8 citations84
US7348246B2Mar 25, 2008
Methods of fabricating non-volatile memory devices including divided charge storage structures
SAMSUNG ELECTRONICS CO LTD13 citations84
US7316968B2Jan 8, 2008
Methods of forming semiconductor devices having multiple channel MOS transistors
SAMSUNG ELECTRONICS CO LTD9 citations84
US7129541B2Oct 31, 2006
Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate
SAMSUNG ELECTRONICS CO LTD13 citations84
US7442987B2Oct 28, 2008
Non-volatile memory devices including divided charge storage structures
SAMSUNG ELECTRONICS CO LTD6 citations74
US7897463B2Mar 1, 2011
Methods of fabricating vertical twin-channel transistors
SAMSUNG ELECTRONICS CO LTD6 citations63
US7851287B2Dec 14, 2010
Method of fabricating Schottky barrier FinFET device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7821821B2Oct 26, 2010
Multibit electro-mechanical device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7803697B2Sep 28, 2010
Highly integrated semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7790494B2Sep 7, 2010
Method of fabricating a multi-bit electro-mechanical memory device
SAMSUNG ELECTRONICS CO LTD6 citations63
US7791936B2Sep 7, 2010
Multibit electro-mechanical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7768070B2Aug 3, 2010
Semiconductor devices having field effect transistors
SAMSUNG ELECTRONICS CO LTD5 citations63
US7723762B2May 25, 2010
Schottky barrier FinFET device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD3 citations63
US7719068B2May 18, 2010
Multi-bit electro-mechanical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7709356B2May 4, 2010
Methods of forming a pattern and methods of manufacturing a memory device using the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7541645B2Jun 2, 2009
Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions
SAMSUNG ELECTRONICS CO LTD4 citations63
US7511998B2Mar 31, 2009
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7285456B2Oct 23, 2007
Method of fabricating a fin field effect transistor having a plurality of protruding channels
SAMSUNG ELECTRONICS CO LTD3 citations63
US7037768B2May 2, 2006
Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivity
SAMSUNG ELECTRONICS CO LTD5 citations63
US6881637B2Apr 19, 2005
Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate
SAMSUNG ELECTRONICS CO LTD2 citations62
US7973343B2Jul 5, 2011
Multibit electro-mechanical memory device having cantilever electrodes
SAMSUNG ELECTRONICS CO LTD1 citations52
US7911011B2Mar 22, 2011
Methods of fabricating electromechanical non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US7675142B2Mar 9, 2010
Electromechanical non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US7482649B2Jan 27, 2009
Multi-bit nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD1 citations52
US7187022B2Mar 6, 2007
Semiconductor device having a multi-bridge-channel and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
KIM SUNG-MIN
3 patentsUS8179711B2May 15, 2012
Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell
KIM SUNG-MIN122 citations98
US8168492B2May 1, 2012
Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same
KIM SUNG-MIN4 citations63
US8198704B2Jun 12, 2012
Semiconductor device including a crystal semiconductor layer
KIM SUNG-MIN1 citations52
YUN EUN-JUNG
3 patentsUS8129800B2Mar 6, 2012
Gate-all-around integrated circuit devices
YUN EUN-JUNG25 citations92
US8835993B2Sep 16, 2014
Gate-all-around integrated circuit devices
YUN EUN-JUNG2 citations62
US8222067B2Jul 17, 2012
Method of manufacturing multibit electro-mechanical memory device having movable electrode
YUN EUN-JUNG2 citations61