Inventor
WANG HSIANG-YING
TW12 patents
⚠️ This page may combine multiple inventors who share the name “WANG HSIANG-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
10 patentsUS7473606B2Jan 6, 2009
Method for fabricating metal-oxide semiconductor transistors
UNITED MICROELECTRONICS CORP27 citations92
US6815770B1Nov 9, 2004
MOS transistor having reduced source/drain extension sheet resistance
UNITED MICROELECTRONICS CORP37 citations92
US6943085B2Sep 13, 2005
Method of manufacturing metal-oxide-semiconductor transistor
UNITED MICROELECTRONICS CORP14 citations84
US7396717B2Jul 8, 2008
Method of forming a MOS transistor
UNITED MICROELECTRONICS CORP15 citations82
US7795101B2Sep 14, 2010
Method of forming a MOS transistor
UNITED MICROELECTRONICS CORP7 citations71
US7071046B2Jul 4, 2006
Method of manufacturing a MOS transistor
UNITED MICROELECTRONICS CORP10 citations71
US7060547B2Jun 13, 2006
Method for forming a junction region of a semiconductor device
UNITED MICROELECTRONICS CORP2 citations62
US7176504B1Feb 13, 2007
SiGe MOSFET with an erosion preventing Six1Gey1 layer
UNITED MICROELECTRONICS CORP3 citations57
US7435658B2Oct 14, 2008
Method of manufacturing metal-oxide-semiconductor transistor
UNITED MICROELECTRONICS CORP1 citations52
US8053847B2Nov 8, 2011
Method for fabricating metal-oxide semiconductor transistors
UNITED MICROELECTRONICS CORP0 citations51