Inventor
ENGLAND JONATHAN GERALD
GB21 patents
⚠️ This page may combine multiple inventors who share the name “ENGLAND JONATHAN GERALD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VARIAN SEMICONDUCTOR EQUIPMENT
13 patentsUS8846508B1Sep 30, 2014
Method of implanting high aspect ratio features
VARIAN SEMICONDUCTOR EQUIPMENT23 citations92
US7446326B2Nov 4, 2008
Technique for improving ion implanter productivity
VARIAN SEMICONDUCTOR EQUIPMENT29 citations92
US7655933B2Feb 2, 2010
Techniques for temperature-controlled ion implantation
VARIAN SEMICONDUCTOR EQUIPMENT8 citations82
US7642150B2Jan 5, 2010
Techniques for forming shallow junctions
VARIAN SEMICONDUCTOR EQUIPMENT9 citations82
US7528392B2May 5, 2009
Techniques for low-temperature ion implantation
VARIAN SEMICONDUCTOR EQUIPMENT12 citations82
US7355188B2Apr 8, 2008
Technique for uniformity tuning in an ion implanter system
VARIAN SEMICONDUCTOR EQUIPMENT13 citations80
US7561983B2Jul 14, 2009
Technique for improving ion implantation based on ion beam angle-related information
VARIAN SEMICONDUCTOR EQUIPMENT3 citations63
US7482598B2Jan 27, 2009
Techniques for preventing parasitic beamlets from affecting ion implantation
VARIAN SEMICONDUCTOR EQUIPMENT3 citations60
US7622722B2Nov 24, 2009
Ion implantation device with a dual pumping mode and method thereof
VARIAN SEMICONDUCTOR EQUIPMENT2 citations58
US7547900B2Jun 16, 2009
Techniques for providing a ribbon-shaped gas cluster ion beam
VARIAN SEMICONDUCTOR EQUIPMENT0 citations52
US9018064B2Apr 28, 2015
Method of doping a polycrystalline transistor channel for vertical NAND devices
VARIAN SEMICONDUCTOR EQUIPMENT1 citations51
US7476878B2Jan 13, 2009
Techniques for reducing effects of photoresist outgassing
VARIAN SEMICONDUCTOR EQUIPMENT0 citations50
US7888636B2Feb 15, 2011
Measuring energy contamination using time-of-flight techniques
VARIAN SEMICONDUCTOR EQUIPMENT0 citations42
APPLIED MATERIALS INC
7 patentsUS6060715AMay 9, 2000
Method and apparatus for ion beam scanning in an ion implanter
APPLIED MATERIALS INC58 citations96
US5932882AAug 3, 1999
Ion implanter with post mass selection deceleration
APPLIED MATERIALS INC75 citations96
US5883391AMar 16, 1999
Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
APPLIED MATERIALS INC51 citations96
US5969366AOct 19, 1999
Ion implanter with post mass selection deceleration
APPLIED MATERIALS INC67 citations95
US6515408B1Feb 4, 2003
Ion beam apparatus and a method for neutralizing space charge in an ion beam
APPLIED MATERIALS INC20 citations89
US6093456AJul 25, 2000
Beam stop apparatus for an ion implanter
APPLIED MATERIALS INC12 citations68
US11387073B2Jul 12, 2022
In situ angle measurement using channeling
APPLIED MATERIALS INC0 citations62