P

Inventor

CHO KYOUNG LAE

KR83 patents
⚠️ This page may combine multiple inventors who share the name “CHO KYOUNG LAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US7911848B2Mar 22, 2011

Memory device and memory data determination method

SAMSUNG ELECTRONICS CO LTD65 citations98
US7889563B2Feb 15, 2011

Memory device and method of controlling read level

SAMSUNG ELECTRONICS CO LTD35 citations91
US8873290B2Oct 28, 2014

Non-volatile memory device capable of multi-page programming by simultaneously activating a plurality of selection lines based on programmed data

SAMSUNG ELECTRONICS CO LTD5 citations84
US8352808B2Jan 8, 2013

Data storage system and device with randomizer/de-randomizer

SAMSUNG ELECTRONICS CO LTD12 citations84
US7924624B2Apr 12, 2011

Memory device and memory programming method

SAMSUNG ELECTRONICS CO LTD8 citations84
US7911842B2Mar 22, 2011

Memory cell programming method and semiconductor device for simultaneously programming a plurality of memory block groups

SAMSUNG ELECTRONICS CO LTD10 citations84
US7903459B2Mar 8, 2011

Memory devices and methods for determining data of bit layers based on detected error bits

SAMSUNG ELECTRONICS CO LTD16 citations84
US7885107B2Feb 8, 2011

Methods of programming non-volatile memory cells

SAMSUNG ELECTRONICS CO LTD7 citations84
US7864574B2Jan 4, 2011

Memory device and memory programming method

SAMSUNG ELECTRONICS CO LTD10 citations84
US7843727B2Nov 30, 2010

Memory device and data reading method

SAMSUNG ELECTRONICS CO LTD16 citations84
US7746702B2Jun 29, 2010

Memory device and method for estimating characteristics of multi-bit programming

SAMSUNG ELECTRONICS CO LTD11 citations84
US8347194B2Jan 1, 2013

Hierarchical decoding apparatus

SAMSUNG ELECTRONICS CO LTD15 citations82
US7738293B2Jun 15, 2010

Apparatus and method of memory programming

SAMSUNG ELECTRONICS CO LTD5 citations74
US7729175B2Jun 1, 2010

Method of writing/reading data into/from memory cell and page buffer using different codes for writing and reading operations

SAMSUNG ELECTRONICS CO LTD7 citations74
US9190160B2Nov 17, 2015

Memory device having variable read voltage and related methods of operation

SAMSUNG ELECTRONICS CO LTD6 citations65

SK HYNIX INC

10 patents

CHO KYOUNG LAE

8 patents

KIM YONG JUNE

4 patents

SONG SEUNG-HWAN

2 patents

SEO MAN-KEUN

2 patents

CHOI SEONG HYEOG

1 patent

KIM JAEHONG

1 patent

KIM JAE HONG

1 patent

JO NAM PHIL

1 patent

KONG JUN JIN

1 patent

JIN YOUNG GU

1 patent

CHO KYOUNG-LAE

1 patent

KIM YONG-JUNE

1 patent

EUN HEE SEOK

1 patent

Showing the top 50 of 83 patents by PatentIndex Score.