Inventor
RAMASWAMI SESHADRI
US39 patents
⚠️ This page may combine multiple inventors who share the name “RAMASWAMI SESHADRI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
30 patentsUS6627542B1Sep 30, 2003
Continuous, non-agglomerated adhesion of a seed layer to a barrier layer
APPLIED MATERIALS INC64 citations96
US6001227ADec 14, 1999
Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
APPLIED MATERIALS INC40 citations96
US5925225AJul 20, 1999
Method of producing smooth titanium nitride films having low resistivity
APPLIED MATERIALS INC41 citations96
US6139701AOct 31, 2000
Copper target for sputter deposition
APPLIED MATERIALS INC85 citations95
US6086725AJul 11, 2000
Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
APPLIED MATERIALS INC48 citations95
US6599399B2Jul 29, 2003
Sputtering method to generate ionized metal plasma using electron beams and magnetic field
APPLIED MATERIALS INC29 citations93
US6420260B1Jul 16, 2002
Ti/Tinx underlayer which enables a highly <111> oriented aluminum interconnect
APPLIED MATERIALS INC34 citations93
US6046100AApr 4, 2000
Method of fabricating a fabricating plug and near-zero overlap interconnect line
APPLIED MATERIALS INC27 citations93
US6391163B1May 21, 2002
Method of enhancing hardness of sputter deposited copper films
APPLIED MATERIALS INC37 citations92
US6228186B1May 8, 2001
Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomalies
APPLIED MATERIALS INC23 citations92
US6171455B1Jan 9, 2001
Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
APPLIED MATERIALS INC15 citations92
US5882399AMar 16, 1999
Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
APPLIED MATERIALS INC52 citations90
US6475356B1Nov 5, 2002
Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
APPLIED MATERIALS INC20 citations84
US6126791AOct 3, 2000
Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
APPLIED MATERIALS INC12 citations82
US6149777ANov 21, 2000
Method of producing smooth titanium nitride films having low resistivity
APPLIED MATERIALS INC6 citations74
US6059872AMay 9, 2000
Smooth titanium nitride films having low resistivity
APPLIED MATERIALS INC11 citations74
US6521107B2Feb 18, 2003
Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
APPLIED MATERIALS INC8 citations73
US11094573B2Aug 17, 2021
Method and apparatus for thin wafer carrier
APPLIED MATERIALS INC3 citations72
US6899799B2May 31, 2005
Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
APPLIED MATERIALS INC6 citations68
US10665494B2May 26, 2020
Automated apparatus to temporarily attach substrates to carriers without adhesives for processing
APPLIED MATERIALS INC3 citations65
US6455921B1Sep 24, 2002
Fabricating plug and near-zero overlap interconnect line
APPLIED MATERIALS INC4 citations63
US6472867B1Oct 29, 2002
Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
APPLIED MATERIALS INC3 citations62
US10978334B2Apr 13, 2021
Sealing structure for workpiece to substrate bonding in a processing chamber
APPLIED MATERIALS INC0 citations61
US10879094B2Dec 29, 2020
Electrostatic chucking force measurement tool for process chamber carriers
APPLIED MATERIALS INC1 citations60
US12211947B2Jan 28, 2025
Copper, indium, gallium, selenium (CIGS) films with improved quantum efficiency
APPLIED MATERIALS INC0 citations58
US11728449B2Aug 15, 2023
Copper, indium, gallium, selenium (CIGS) films with improved quantum efficiency
APPLIED MATERIALS INC0 citations58
US11088293B2Aug 10, 2021
Methods and apparatus for producing copper-indium-gallium-selenium (CIGS) film
APPLIED MATERIALS INC0 citations58
US11018275B2May 25, 2021
Method of creating CIGS photodiode for image sensor applications
APPLIED MATERIALS INC0 citations58
US9502294B2Nov 22, 2016
Method and system for wafer level singulation
APPLIED MATERIALS INC0 citations52
US12262559B2Mar 25, 2025
Monolithic complementary field-effect transistors having carbon-doped release layers
APPLIED MATERIALS INC0 citations46
ADVANCED MICRO DEVICES INC
6 patentsUS5456756AOct 10, 1995
Holding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor wafer
ADVANCED MICRO DEVICES INC58 citations96
US5451545ASep 19, 1995
Process for forming stable local interconnect/active area silicide structure VLSI applications
ADVANCED MICRO DEVICES INC54 citations96
US5614446AMar 25, 1997
Holding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor wafer
ADVANCED MICRO DEVICES INC30 citations92
US5365111ANov 15, 1994
Stable local interconnect/active area silicide structure for VLSI applications
ADVANCED MICRO DEVICES INC12 citations74
US5539247AJul 23, 1996
Selective metal via plug growth technology for deep sub-micrometer ULSI
ADVANCED MICRO DEVICES INC13 citations73
US5453402ASep 26, 1995
Selective metal via plug growth technology for deep sub-micrometer ULSI
ADVANCED MICRO DEVICES INC5 citations62