Inventor
LAI CHUNG WOH
SG24 patents
⚠️ This page may combine multiple inventors who share the name “LAI CHUNG WOH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
8 patentsUS7445978B2Nov 4, 2008
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
CHARTERED SEMICONDUCTOR MFG22 citations92
US6653227B1Nov 25, 2003
Method of cobalt silicidation using an oxide-Titanium interlayer
CHARTERED SEMICONDUCTOR MFG21 citations89
US7256084B2Aug 14, 2007
Composite stress spacer
CHARTERED SEMICONDUCTOR MFG12 citations83
US6383922B1May 7, 2002
Thermal stability improvement of CoSi2 film by stuffing in titanium
CHARTERED SEMICONDUCTOR MFG8 citations72
US7615427B2Nov 10, 2009
Spacer-less low-k dielectric processes
CHARTERED SEMICONDUCTOR MFG3 citations62
US7795680B2Sep 14, 2010
Integrated circuit system employing selective epitaxial growth technology
CHARTERED SEMICONDUCTOR MFG0 citations51
US7767577B2Aug 3, 2010
Nested and isolated transistors with reduced impedance difference
CHARTERED SEMICONDUCTOR MFG0 citations51
US7955936B2Jun 7, 2011
Semiconductor fabrication process including an SiGe rework method
CHARTERED SEMICONDUCTOR MFG1 citations50
GLOBALFOUNDRIES SG PTE LTD
4 patentsUS8053327B2Nov 8, 2011
Method of manufacture of an integrated circuit system with self-aligned isolation structures
GLOBALFOUNDRIES SG PTE LTD3 citations62
US7999325B2Aug 16, 2011
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
GLOBALFOUNDRIES SG PTE LTD3 citations62
US7999300B2Aug 16, 2011
Memory cell structure and method for fabrication thereof
GLOBALFOUNDRIES SG PTE LTD0 citations52
US7932178B2Apr 26, 2011
Integrated circuit having a plurality of MOSFET devices
GLOBALFOUNDRIES SG PTE LTD0 citations41