Inventor
NISHIHARA SHINJI
JP42 patents
⚠️ This page may combine multiple inventors who share the name “NISHIHARA SHINJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
18 patentsUS5904556AMay 18, 1999
Method for making semiconductor integrated circuit device having interconnection structure using tungsten film
HITACHI LTD63 citations95
US5444012AAug 22, 1995
Method for manufacturing semiconductor integrated circuit device having a fuse element
HITACHI LTD84 citations95
US6656828B1Dec 2, 2003
Method of forming bump electrodes
HITACHI LTD102 citations93
US6583049B2Jun 24, 2003
Semiconductor integrated circuit device and method for making the same
HITACHI LTD13 citations92
US6503803B2Jan 7, 2003
Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer
HITACHI LTD16 citations92
US6031288AFeb 29, 2000
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
HITACHI LTD36 citations92
US5188975AFeb 23, 1993
Method of producing a connection hole for a DRAM having at least three conductor layers in a self alignment manner.
HITACHI LTD38 citations92
US7064437B2Jun 20, 2006
Semiconductor device having aluminum conductors
HITACHI LTD5 citations74
US6858484B2Feb 22, 2005
Method of fabricating semiconductor integrated circuit device
HITACHI LTD5 citations74
US6476492B2Nov 5, 2002
Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten
HITACHI LTD5 citations74
US6472754B2Oct 29, 2002
Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector
HITACHI LTD13 citations74
US6326216B1Dec 4, 2001
Process for producing semiconductor integrated circuit device
HITACHI LTD13 citations73
US6300237B1Oct 9, 2001
Semiconductor integrated circuit device and method for making the same
HITACHI LTD7 citations73
US6268658B1Jul 31, 2001
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
HITACHI LTD10 citations73
US6617691B2Sep 9, 2003
Semiconductor device
HITACHI LTD4 citations63
US6548904B2Apr 15, 2003
Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum
HITACHI LTD4 citations63
US6545362B2Apr 8, 2003
Semiconductor device and method of manufacturing the same
HITACHI LTD1 citations52
US6538329B2Mar 25, 2003
Semiconductor integrated circuit device and method for making the same
HITACHI LTD0 citations51
RENESAS TECH CORP
8 patentsUS6780757B2Aug 24, 2004
Semiconductor integrated circuit device and method for making the same
RENESAS TECH CORP17 citations92
US6693001B2Feb 17, 2004
Process for producing semiconductor integrated circuit device
RENESAS TECH CORP17 citations84
US6856021B1Feb 15, 2005
Semiconductor device having aluminum alloy conductors
RENESAS TECH CORP5 citations74
US7553766B2Jun 30, 2009
Method of fabricating semiconductor integrated circuit device
RENESAS TECH CORP2 citations63
US7314830B2Jan 1, 2008
Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt
RENESAS TECH CORP2 citations63
US7241685B2Jul 10, 2007
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP1 citations52
US7214577B2May 8, 2007
Method of fabricating semiconductor integrated circuit device
RENESAS TECH CORP0 citations52
US6784549B2Aug 31, 2004
Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum
RENESAS TECH CORP0 citations52
FURUMURA YUJI
8 patentsUS8237622B2Aug 7, 2012
Base sheet
FURUMURA YUJI26 citations91
US8724978B2May 13, 2014
Fluid heating-cooling cylinder device
FURUMURA YUJI15 citations83
US8933784B2Jan 13, 2015
RF powder particle, RF powder, and RF powder-containing base
FURUMURA YUJI11 citations82
US8766853B2Jul 1, 2014
Method for adding RF powder and RF powder-added base sheet
FURUMURA YUJI12 citations82
US8178415B2May 15, 2012
Method for manufacturing RF powder
FURUMURA YUJI10 citations82
US8766802B2Jul 1, 2014
Base data management system
FURUMURA YUJI2 citations61
US8318047B2Nov 27, 2012
Method for providing RF powder and RF powder-containing liquid
FURUMURA YUJI4 citations61
US8704202B2Apr 22, 2014
RF powder particles including an inductance element, a capacitance element, and a photovoltaic cell and method for exciting RF powder
FURUMURA YUJI0 citations51
PHILTECH INC
4 patentsUS9709340B2Jul 18, 2017
Fluid heat exchanging apparatus
PHILTECH INC1 citations49
US9340736B2May 17, 2016
Solid gasification apparatus
PHILTECH INC0 citations49
US9915483B2Mar 13, 2018
Fluid heat exchanging apparatus
PHILTECH INC0 citations39
US10428422B2Oct 1, 2019
Film-forming method
PHILTECH INC0 citations35