Inventor
OKABE HIROAKI
JP7 patents
Patents
7 patentsUS10643967B2May 5, 2020
Power semiconductor device that includes a copper layer disposed on an electrode and located away from a polyimide layer and method for manufacturing the power semiconductor device
MITSUBISHI ELECTRIC CORP2 citations70
US9842738B2Dec 12, 2017
Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP2 citations70
US9515145B2Dec 6, 2016
Vertical MOSFET device with steady on-resistance
MITSUBISHI ELECTRIC CORP5 citations70
US12094959B2Sep 17, 2024
Semiconductor device and method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations50
US11158511B2Oct 26, 2021
Semiconductor device and power converter including a copper film with a small grain size stress relaxtion layer
MITSUBISHI ELECTRIC CORP0 citations49
US10276502B2Apr 30, 2019
Semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP0 citations49
US9721915B2Aug 1, 2017
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations38