P

Inventor

ZHANG GUOWEI

SG53 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG GUOWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES SG PTE LTD

20 patents
US10283622B1May 7, 2019

Extended drain transistor on a crystalline-on-insulator substrate

GLOBALFOUNDRIES SG PTE LTD11 citations84
US9698260B1Jul 4, 2017

High voltage device with low Rdson

GLOBALFOUNDRIES SG PTE LTD10 citations84
US9105502B2Aug 11, 2015

Integrated circuit comprising on-chip resistors with plurality of first and second terminals coupled to the resistor body

GLOBALFOUNDRIES SG PTE LTD7 citations79
US9515152B2Dec 6, 2016

Simple and cost-free MTP structure

GLOBALFOUNDRIES SG PTE LTD5 citations72
US12310047B1May 20, 2025

Laterally-diffused metal-oxide-semiconductor devices with a field plate

GLOBALFOUNDRIES SG PTE LTD1 citations64
US7951680B2May 31, 2011

Integrated circuit system employing an elevated drain

GLOBALFOUNDRIES SG PTE LTD5 citations63
US10910377B2Feb 2, 2021

LDMOS devices, integrated circuits including LDMSO devices, and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD1 citations62
US9099434B2Aug 4, 2015

High voltage device

GLOBALFOUNDRIES SG PTE LTD2 citations62
US11011632B2May 18, 2021

High voltage devices and methods of forming the same

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10797171B2Oct 6, 2020

Laterally diffused mosfet with locos dot

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10134892B2Nov 20, 2018

High voltage device with low Rdson

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10032905B1Jul 24, 2018

Integrated circuits with high voltage transistors and methods for producing the same

GLOBALFOUNDRIES SG PTE LTD1 citations52
US9768054B2Sep 19, 2017

High voltage device with low Rdson

GLOBALFOUNDRIES SG PTE LTD1 citations52
US9525061B2Dec 20, 2016

Semiconductor device including an n-well structure

GLOBALFOUNDRIES SG PTE LTD1 citations52
US9478657B2Oct 25, 2016

High gain device

GLOBALFOUNDRIES SG PTE LTD0 citations52
US9343571B2May 17, 2016

MOS with recessed lightly-doped drain

GLOBALFOUNDRIES SG PTE LTD0 citations52
US9184283B2Nov 10, 2015

High voltage device

GLOBALFOUNDRIES SG PTE LTD1 citations52
US8912066B2Dec 16, 2014

Lateral double-diffused high voltage device

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10658505B1May 19, 2020

High voltage device and a method for forming the high voltage device

GLOBALFOUNDRIES SG PTE LTD0 citations42
US9368488B2Jun 14, 2016

Efficient integration of CMOS with poly resistor

GLOBALFOUNDRIES SG PTE LTD0 citations42

ZHANG GUOWEI

9 patents

CHU SANFORD

3 patents

CHARTERED SEMICONDUCTOR MFG

2 patents

RESEARCH IN MOTION LTD

2 patents

BLACKBERRY LTD

2 patents

DONGGUAN YAOYU PLASTIC HARDWARE PRODUCTS CO LTD

2 patents

UNIV TSINGHUA

1 patent

SEMICONDUCTOR MFG INT SHANGHAI

1 patent

GLOBALFOUNDARIES SINGAPORE PTE LTD

1 patent

VERMA PURAKH RAJ

1 patent

MGAGE LLC

1 patent

KOO JEOUNG MO

1 patent

UNIV CHINA MINING

1 patent

ALIPAY HANGZHOU INF TECH CO LTD

1 patent

UNIV NORTH CHINA

1 patent

SEMICONDUCTOR MFG INT SHANGHAI CORP

1 patent

Showing the top 50 of 53 patents by PatentIndex Score.