P

Inventor

NAKANISHI FUMITAKE

JP17 patents
⚠️ This page may combine multiple inventors who share the name “NAKANISHI FUMITAKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

9 patents
US7873088B2Jan 18, 2011

Group III nitride semiconductor element and epitaxial wafer

SUMITOMO ELECTRIC INDUSTRIES11 citations84
US9136337B2Sep 15, 2015

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

SUMITOMO ELECTRIC INDUSTRIES7 citations83
US7863609B2Jan 4, 2011

Compound semiconductor substrate, semiconductor device, and processes for producing them

SUMITOMO ELECTRIC INDUSTRIES8 citations83
US10600676B2Mar 24, 2020

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

SUMITOMO ELECTRIC INDUSTRIES2 citations72
US9917004B2Mar 13, 2018

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

SUMITOMO ELECTRIC INDUSTRIES2 citations72
US11891720B2Feb 6, 2024

Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US7932114B2Apr 26, 2011

Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer

SUMITOMO ELECTRIC INDUSTRIES2 citations62
US11094537B2Aug 17, 2021

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations61
US9312340B2Apr 12, 2016

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

SUMITOMO ELECTRIC INDUSTRIES1 citations52

YOSHIZUMI YUSUKE

2 patents
US8107507B2Jan 31, 2012

Group III nitride semiconductor element and epitaxial wafer

YOSHIZUMI YUSUKE2 citations62
US8391327B2Mar 5, 2013

Group III nitride semiconductor element and epitaxial wafer

YOSHIZUMI YUSUKE0 citations52

YOSHIMOTO SUSUMU

1 patent
US8605769B2Dec 10, 2013

Semiconductor laser device and manufacturing method thereof

YOSHIMOTO SUSUMU3 citations56

FUJIWARA SHINSUKE

1 patent
US8253162B2Aug 28, 2012

GaN substrate and light-emitting device

FUJIWARA SHINSUKE0 citations51

ISHIBASHI KEIJI

1 patent
US8242498B2Aug 14, 2012

Compound semiconductor substrate, semiconductor device, and processes for producing them

ISHIBASHI KEIJI0 citations51

NAKANISHI FUMITAKE

1 patent
US8471264B2Jun 25, 2013

Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer

NAKANISHI FUMITAKE0 citations45

ENYA YOHEI

1 patent
US8173458B2May 8, 2012

Method for forming quantum well structure and method for manufacturing semiconductor light emitting element

ENYA YOHEI0 citations40

MATSUBARA HIDEKI

1 patent
US8274088B2Sep 25, 2012

Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof

MATSUBARA HIDEKI0 citations35