Inventor
SHIN JONG-HAN
KR31 patents
⚠️ This page may combine multiple inventors who share the name “SHIN JONG-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
12 patentsUS10043854B1Aug 7, 2018
Electronic device including transistor and method for fabricating the same
SK HYNIX INC11 citations84
US9331267B2May 3, 2016
Electronic device having buried gate and method for fabricating the same
SK HYNIX INC4 citations73
US11245070B2Feb 8, 2022
Electronic device and method for fabricating the same
SK HYNIX INC0 citations62
US8975173B2Mar 10, 2015
Semiconductor device with buried gate and method for fabricating the same
SK HYNIX INC2 citations55
US9842881B2Dec 12, 2017
Electronic device including metal-insulator-semiconductor structure and method for fabricating the same
SK HYNIX INC0 citations52
US9640626B2May 2, 2017
Semiconductor device with buried gates and bit line contacting peripheral gate
SK HYNIX INC0 citations52
US9570511B2Feb 14, 2017
Electronic device having buried gate and method for fabricating the same
SK HYNIX INC0 citations52
US10333061B2Jun 25, 2019
Electronic device and method for fabricating the same
SK HYNIX INC0 citations51
US10333060B2Jun 25, 2019
Electronic device and method for fabricating the same
SK HYNIX INC0 citations51
US8753966B2Jun 17, 2014
Method for fabricating buried gates using pre landing plugs
SK HYNIX INC0 citations51
US8384135B2Feb 26, 2013
Phase-change random access memory device and method of manufacturing the same
SK HYNIX INC0 citations51
US10559422B2Feb 11, 2020
Electronic device and method for fabricating the same using treatment with nitrogen and hydrogen
SK HYNIX INC0 citations40
HYNIX SEMICONDUCTOR INC
9 patentsUS7871913B2Jan 18, 2011
Method for manufacturing semiconductor device having vertical transistor
HYNIX SEMICONDUCTOR INC9 citations84
US8357600B2Jan 22, 2013
Method for fabricating buried gate using pre landing plugs
HYNIX SEMICONDUCTOR INC6 citations83
US7981797B2Jul 19, 2011
Phase-change random access memory device and method of manufacturing the same
HYNIX SEMICONDUCTOR INC7 citations83
US8039347B2Oct 18, 2011
Semiconductor device having vertically aligned pillar structures that have flat side surfaces and method for manufacturing the same
HYNIX SEMICONDUCTOR INC6 citations62
US7994056B2Aug 9, 2011
Method for forming pattern in semiconductor device
HYNIX SEMICONDUCTOR INC4 citations62
US7538007B2May 26, 2009
Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same
HYNIX SEMICONDUCTOR INC2 citations62
US7045450B2May 16, 2006
Method of manufacturing semiconductor device
HYNIX SEMICONDUCTOR INC4 citations62
US7507657B2Mar 24, 2009
Method for fabricating storage node contact in semiconductor device
HYNIX SEMICONDUCTOR INC1 citations51
US6939759B2Sep 6, 2005
Method for manufacturing capacitor of semiconductor device
HYNIX SEMICONDUCTOR INC0 citations42
SHIN JONG-HAN
8 patentsUS8492257B2Jul 23, 2013
Semiconductor device with vertical transistor and method for fabricating the same
SHIN JONG-HAN7 citations83
US8404543B2Mar 26, 2013
Method for fabricating semiconductor device with buried gate
SHIN JONG-HAN8 citations83
US8247324B2Aug 21, 2012
Semiconductor device with buried gate and method for fabricating the same
SHIN JONG-HAN9 citations83
US8105902B2Jan 31, 2012
Semiconductor device with vertical transistor and method for fabricating the same
SHIN JONG-HAN13 citations83
US8623727B2Jan 7, 2014
Method for fabricating semiconductor device with buried gate
SHIN JONG-HAN8 citations82
US8598012B2Dec 3, 2013
Method for fabricating semiconductor device with buried gates
SHIN JONG-HAN2 citations61
US9257436B2Feb 9, 2016
Semiconductor device with buried gates and fabrication method thereof
SHIN JONG-HAN0 citations51
US9159732B2Oct 13, 2015
Semiconductor device with buried gate and method for fabricating the same
SHIN JONG-HAN1 citations51