Inventor
LEE YOUNG S
US46 patents
⚠️ This page may combine multiple inventors who share the name “LEE YOUNG S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
24 patentsUS9418858B2Aug 16, 2016
Selective etch of silicon by way of metastable hydrogen termination
APPLIED MATERIALS INC138 citations99
US9093390B2Jul 28, 2015
Conformal oxide dry etch
APPLIED MATERIALS INC185 citations99
US8801952B1Aug 12, 2014
Conformal oxide dry etch
APPLIED MATERIALS INC191 citations99
US8642481B2Feb 4, 2014
Dry-etch for silicon-and-nitrogen-containing films
APPLIED MATERIALS INC188 citations99
US7678715B2Mar 16, 2010
Low wet etch rate silicon nitride film
APPLIED MATERIALS INC516 citations99
US9412581B2Aug 9, 2016
Low-K dielectric gapfill by flowable deposition
APPLIED MATERIALS INC396 citations98
US9064816B2Jun 23, 2015
Dry-etch for selective oxidation removal
APPLIED MATERIALS INC188 citations98
US7967913B2Jun 28, 2011
Remote plasma clean process with cycled high and low pressure clean steps
APPLIED MATERIALS INC477 citations98
US7524750B2Apr 28, 2009
Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
APPLIED MATERIALS INC55 citations96
US7910491B2Mar 22, 2011
Gapfill improvement with low etch rate dielectric liners
APPLIED MATERIALS INC90 citations95
US7087536B2Aug 8, 2006
Silicon oxide gapfill deposition using liquid precursors
APPLIED MATERIALS INC31 citations93
US7972968B2Jul 5, 2011
High density plasma gapfill deposition-etch-deposition process etchant
APPLIED MATERIALS INC9 citations84
US7799704B2Sep 21, 2010
Gas baffle and distributor for semiconductor processing chamber
APPLIED MATERIALS INC15 citations84
US7740706B2Jun 22, 2010
Gas baffle and distributor for semiconductor processing chamber
APPLIED MATERIALS INC19 citations84
US7867921B2Jan 11, 2011
Reduction of etch-rate drift in HDP processes
APPLIED MATERIALS INC7 citations83
US7745350B2Jun 29, 2010
Impurity control in HDP-CVD DEP/ETCH/DEP processes
APPLIED MATERIALS INC13 citations83
US7651587B2Jan 26, 2010
Two-piece dome with separate RF coils for inductively coupled plasma reactors
APPLIED MATERIALS INC8 citations82
US7229931B2Jun 12, 2007
Oxygen plasma treatment for enhanced HDP-CVD gapfill
APPLIED MATERIALS INC16 citations81
US7704897B2Apr 27, 2010
HDP-CVD SiON films for gap-fill
APPLIED MATERIALS INC7 citations68
US8541312B2Sep 24, 2013
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
APPLIED MATERIALS INC3 citations63
US7329586B2Feb 12, 2008
Gapfill using deposition-etch sequence
APPLIED MATERIALS INC6 citations62
US7811411B2Oct 12, 2010
Thermal management of inductively coupled plasma reactors
APPLIED MATERIALS INC2 citations61
US7629271B1Dec 8, 2009
High stress diamond like carbon film
APPLIED MATERIALS INC4 citations60
US7989366B2Aug 2, 2011
Dopant activation in doped semiconductor substrates
APPLIED MATERIALS INC1 citations51