P

Inventor

RANJAN ALOK

US124 patents
⚠️ This page may combine multiple inventors who share the name “RANJAN ALOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

42 patents
US10998169B2May 4, 2021

Systems and methods of control for plasma processing

TOKYO ELECTRON LTD44 citations98
US10290506B2May 14, 2019

Method for etching high-K dielectric using pulsed bias power

TOKYO ELECTRON LTD39 citations98
US9570313B2Feb 14, 2017

Method for etching high-K dielectric using pulsed bias power

TOKYO ELECTRON LTD42 citations98
US9159575B2Oct 13, 2015

Method for etching high-K dielectric using pulsed bias power

TOKYO ELECTRON LTD37 citations98
US11079682B1Aug 3, 2021

Methods for extreme ultraviolet (EUV) resist patterning development

TOKYO ELECTRON LTD18 citations94
US10063062B2Aug 28, 2018

Method of detecting plasma discharge in a plasma processing system

TOKYO ELECTRON LTD40 citations94
US9768033B2Sep 19, 2017

Methods for high precision etching of substrates

TOKYO ELECTRON LTD29 citations94
US9666447B2May 30, 2017

Method for selectivity enhancement during dry plasma etching

TOKYO ELECTRON LTD41 citations93
US9607843B2Mar 28, 2017

Method for roughness improvement and selectivity enhancement during arc layer etch via adjustment of carbon-fluorine content

TOKYO ELECTRON LTD40 citations93
US9576816B2Feb 21, 2017

Method for roughness improvement and selectivity enhancement during arc layer etch using hydrogen

TOKYO ELECTRON LTD38 citations93
US9530667B2Dec 27, 2016

Method for roughness improvement and selectivity enhancement during arc layer etch using carbon

TOKYO ELECTRON LTD38 citations93
US9318343B2Apr 19, 2016

Method to improve etch selectivity during silicon nitride spacer etch

TOKYO ELECTRON LTD30 citations92
US11342195B1May 24, 2022

Methods for anisotropic etch of silicon-based materials with selectivity to organic materials

TOKYO ELECTRON LTD7 citations85
US11094543B1Aug 17, 2021

Defect correction on metal resists

TOKYO ELECTRON LTD7 citations84
US10237916B2Mar 19, 2019

Systems and methods for ESC temperature control

TOKYO ELECTRON LTD7 citations82
US9054050B2Jun 9, 2015

Method for deep silicon etching using gas pulsing

TOKYO ELECTRON LTD7 citations81
US8906760B2Dec 9, 2014

Aspect ratio dependent deposition to improve gate spacer profile, fin-loss and hardmask-loss for FinFET scheme

TOKYO ELECTRON LTD19 citations80
US11251021B2Feb 15, 2022

Mode-switching plasma systems and methods of operating thereof

TOKYO ELECTRON LTD2 citations73
US11056347B2Jul 6, 2021

Method for dry etching compound materials

TOKYO ELECTRON LTD2 citations73
US10483127B2Nov 19, 2019

Methods for high precision plasma etching of substrates

TOKYO ELECTRON LTD2 citations73
US10211065B2Feb 19, 2019

Methods for high precision plasma etching of substrates

TOKYO ELECTRON LTD3 citations73
US9779952B2Oct 3, 2017

Method for laterally trimming a hardmask

TOKYO ELECTRON LTD3 citations73
US12183583B2Dec 31, 2024

Remote source pulsing with advanced pulse control

TOKYO ELECTRON LTD2 citations72
US10818507B2Oct 27, 2020

Method of etching silicon nitride layers for the manufacture of microelectronic workpieces

TOKYO ELECTRON LTD2 citations72
US10446407B2Oct 15, 2019

Method of preferential silicon nitride etching using sulfur hexafluoride

TOKYO ELECTRON LTD3 citations72
US10366902B2Jul 30, 2019

Methods for cyclic etching of a patterned layer

TOKYO ELECTRON LTD2 citations72
US10304688B2May 28, 2019

Method of quasi-atomic layer etching of silicon nitride

TOKYO ELECTRON LTD1 citations72
US10192743B2Jan 29, 2019

Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures

TOKYO ELECTRON LTD2 citations72
US11869756B2Jan 9, 2024

Virtual metrology enhanced plasma process optimization method

TOKYO ELECTRON LTD3 citations71
US9378975B2Jun 28, 2016

Etching method to form spacers having multiple film layers

TOKYO ELECTRON LTD6 citations71
US10529589B2Jan 7, 2020

Method of plasma etching of silicon-containing organic film using sulfur-based chemistry

TOKYO ELECTRON LTD4 citations70
US11264212B1Mar 1, 2022

Ion angle detector

TOKYO ELECTRON LTD2 citations69
US9881807B2Jan 30, 2018

Method for atomic layer etching

TOKYO ELECTRON LTD2 citations68
US12500067B2Dec 16, 2025

Apparatus for edge control during plasma processing

TOKYO ELECTRON LTD0 citations62
US12400865B2Aug 26, 2025

Pulsed capacitively coupled plasma processes

TOKYO ELECTRON LTD0 citations62
US12394629B2Aug 19, 2025

Plasma processing methods using low frequency bias pulses

TOKYO ELECTRON LTD0 citations62
US12288692B2Apr 29, 2025

Method of forming a FET structure by selective deposition of film on source/drain contact

TOKYO ELECTRON LTD0 citations62
US12230475B2Feb 18, 2025

Systems and methods of control for plasma processing

TOKYO ELECTRON LTD0 citations62
US12189297B2Jan 7, 2025

Methods for extreme ultraviolet (EUV) resist patterning development

TOKYO ELECTRON LTD0 citations62
US12057293B2Aug 6, 2024

Methods for real-time pulse measurement and pulse timing adjustment to control plasma process performance

TOKYO ELECTRON LTD1 citations62
US11915910B2Feb 27, 2024

Fast neutral generation for plasma processing

TOKYO ELECTRON LTD0 citations62
US11688586B2Jun 27, 2023

Method and apparatus for plasma processing

TOKYO ELECTRON LTD1 citations62

RANJAN ALOK

5 patents

TATA CONSULTANCY SERVICES LTD

2 patents

DELL PRODUCTS LP

1 patent

Showing the top 50 of 124 patents by PatentIndex Score.