Inventor
RANJAN ALOK
US124 patents
⚠️ This page may combine multiple inventors who share the name “RANJAN ALOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
42 patentsUS10998169B2May 4, 2021
Systems and methods of control for plasma processing
TOKYO ELECTRON LTD44 citations98
US10290506B2May 14, 2019
Method for etching high-K dielectric using pulsed bias power
TOKYO ELECTRON LTD39 citations98
US9570313B2Feb 14, 2017
Method for etching high-K dielectric using pulsed bias power
TOKYO ELECTRON LTD42 citations98
US9159575B2Oct 13, 2015
Method for etching high-K dielectric using pulsed bias power
TOKYO ELECTRON LTD37 citations98
US11079682B1Aug 3, 2021
Methods for extreme ultraviolet (EUV) resist patterning development
TOKYO ELECTRON LTD18 citations94
US10063062B2Aug 28, 2018
Method of detecting plasma discharge in a plasma processing system
TOKYO ELECTRON LTD40 citations94
US9768033B2Sep 19, 2017
Methods for high precision etching of substrates
TOKYO ELECTRON LTD29 citations94
US9666447B2May 30, 2017
Method for selectivity enhancement during dry plasma etching
TOKYO ELECTRON LTD41 citations93
US9607843B2Mar 28, 2017
Method for roughness improvement and selectivity enhancement during arc layer etch via adjustment of carbon-fluorine content
TOKYO ELECTRON LTD40 citations93
US9576816B2Feb 21, 2017
Method for roughness improvement and selectivity enhancement during arc layer etch using hydrogen
TOKYO ELECTRON LTD38 citations93
US9530667B2Dec 27, 2016
Method for roughness improvement and selectivity enhancement during arc layer etch using carbon
TOKYO ELECTRON LTD38 citations93
US9318343B2Apr 19, 2016
Method to improve etch selectivity during silicon nitride spacer etch
TOKYO ELECTRON LTD30 citations92
US11342195B1May 24, 2022
Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
TOKYO ELECTRON LTD7 citations85
US11094543B1Aug 17, 2021
Defect correction on metal resists
TOKYO ELECTRON LTD7 citations84
US10237916B2Mar 19, 2019
Systems and methods for ESC temperature control
TOKYO ELECTRON LTD7 citations82
US9054050B2Jun 9, 2015
Method for deep silicon etching using gas pulsing
TOKYO ELECTRON LTD7 citations81
US8906760B2Dec 9, 2014
Aspect ratio dependent deposition to improve gate spacer profile, fin-loss and hardmask-loss for FinFET scheme
TOKYO ELECTRON LTD19 citations80
US11251021B2Feb 15, 2022
Mode-switching plasma systems and methods of operating thereof
TOKYO ELECTRON LTD2 citations73
US11056347B2Jul 6, 2021
Method for dry etching compound materials
TOKYO ELECTRON LTD2 citations73
US10483127B2Nov 19, 2019
Methods for high precision plasma etching of substrates
TOKYO ELECTRON LTD2 citations73
US10211065B2Feb 19, 2019
Methods for high precision plasma etching of substrates
TOKYO ELECTRON LTD3 citations73
US9779952B2Oct 3, 2017
Method for laterally trimming a hardmask
TOKYO ELECTRON LTD3 citations73
US12183583B2Dec 31, 2024
Remote source pulsing with advanced pulse control
TOKYO ELECTRON LTD2 citations72
US10818507B2Oct 27, 2020
Method of etching silicon nitride layers for the manufacture of microelectronic workpieces
TOKYO ELECTRON LTD2 citations72
US10446407B2Oct 15, 2019
Method of preferential silicon nitride etching using sulfur hexafluoride
TOKYO ELECTRON LTD3 citations72
US10366902B2Jul 30, 2019
Methods for cyclic etching of a patterned layer
TOKYO ELECTRON LTD2 citations72
US10304688B2May 28, 2019
Method of quasi-atomic layer etching of silicon nitride
TOKYO ELECTRON LTD1 citations72
US10192743B2Jan 29, 2019
Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures
TOKYO ELECTRON LTD2 citations72
US11869756B2Jan 9, 2024
Virtual metrology enhanced plasma process optimization method
TOKYO ELECTRON LTD3 citations71
US9378975B2Jun 28, 2016
Etching method to form spacers having multiple film layers
TOKYO ELECTRON LTD6 citations71
US10529589B2Jan 7, 2020
Method of plasma etching of silicon-containing organic film using sulfur-based chemistry
TOKYO ELECTRON LTD4 citations70
US11264212B1Mar 1, 2022
Ion angle detector
TOKYO ELECTRON LTD2 citations69
US9881807B2Jan 30, 2018
Method for atomic layer etching
TOKYO ELECTRON LTD2 citations68
US12500067B2Dec 16, 2025
Apparatus for edge control during plasma processing
TOKYO ELECTRON LTD0 citations62
US12400865B2Aug 26, 2025
Pulsed capacitively coupled plasma processes
TOKYO ELECTRON LTD0 citations62
US12394629B2Aug 19, 2025
Plasma processing methods using low frequency bias pulses
TOKYO ELECTRON LTD0 citations62
US12288692B2Apr 29, 2025
Method of forming a FET structure by selective deposition of film on source/drain contact
TOKYO ELECTRON LTD0 citations62
US12230475B2Feb 18, 2025
Systems and methods of control for plasma processing
TOKYO ELECTRON LTD0 citations62
US12189297B2Jan 7, 2025
Methods for extreme ultraviolet (EUV) resist patterning development
TOKYO ELECTRON LTD0 citations62
US12057293B2Aug 6, 2024
Methods for real-time pulse measurement and pulse timing adjustment to control plasma process performance
TOKYO ELECTRON LTD1 citations62
US11915910B2Feb 27, 2024
Fast neutral generation for plasma processing
TOKYO ELECTRON LTD0 citations62
US11688586B2Jun 27, 2023
Method and apparatus for plasma processing
TOKYO ELECTRON LTD1 citations62
RANJAN ALOK
5 patentsUS8735291B2May 27, 2014
Method for etching high-k dielectric using pulsed bias power
RANJAN ALOK39 citations97
US9111746B2Aug 18, 2015
Method for reducing damage to low-k gate spacer during etching
RANJAN ALOK29 citations93
US8592327B2Nov 26, 2013
Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damage
RANJAN ALOK9 citations82
US8551877B2Oct 8, 2013
Sidewall and chamfer protection during hard mask removal for interconnect patterning
RANJAN ALOK12 citations82
US8809194B2Aug 19, 2014
Formation of SiOCl-containing layer on spacer sidewalls to prevent CD loss during spacer etch
RANJAN ALOK5 citations71
TATA CONSULTANCY SERVICES LTD
2 patentsDELL PRODUCTS LP
1 patentShowing the top 50 of 124 patents by PatentIndex Score.