Inventor

KUB FRANCIS J

US100 patents

⚠️ This page may combine multiple inventors who share the name “KUB FRANCIS J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUB FRANCIS J

US NAVY

Electronic device with composite substrate

Single-crystal material on non-single-crystalline substrate

Fabrication ultra-thin bonded semiconductor layers

Method for fabricating singe crystal materials over CMOS devices

Method for making electro-optical devices using a hydrogenion splitting technique

Method of producing a thin silicon-on-insulator layer

Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting

Automatically sharp field emission cathodes

Wafer bonding of thinned electronic materials and circuits to high performance substrates

Vertical conducting power semiconductor devices implemented by deep etch

Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques

Method for making shallow diffusion junctions in semiconductors using elemental doping

Resistive gate magnetic field sensor

Floating gate magnetic field sensor

Transistor with enhanced channel charge inducing material layer and threshold voltage control

Atomically sharp field emission cathodes

Vertical conducting power semiconducting devices made by deep reactive ion etching

Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices

Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions

Neutron detector with gamma ray isolation

Low temperature hydrophobic direct wafer bonding

Method of making a graphene base transistor with reduced collector area

KUB FRANCIS J

III-nitride P-channel field effect transistor with hole carriers in the channel

Transistor with enhanced channel charge inducing material layer and threshold voltage control

Semiconductor structure or device integrated with diamond

Light-emitting devices with integrated diamond

Graphene base transistor with reduced collector area

Inverted III-nitride P-channel field effect transistor with hole carriers in the channel

Graphene on semiconductor detector

Transistor with enhanced channel charge inducing material layer and threshold voltage control

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

Infrared laser

Method of forming graphene on a surface

Formation of graphene on a surface

Method of forming graphene on a surface

Diamond and diamond composite material

WESTINGHOUSE ELECTRIC CORP

Self-aligned, field aiding double polysilicon CCD electrode structure

Novel bipolar transistor with a dual-dielectric tunnel emitter

Method of forming a lateral bipolar transistor in a groove

Charge coupled device with structures for forward scuppering to reduce noise

Radiant energy sensor with blooming control

INTERSIL CORP

Advanced methods for making semiconductor devices by low temperature direct bonding

Methods for making semiconductor devices by low temperature direct bonding

INTERSIL INC

Devices formable by low temperature direct bonding

CALDWELL JOSHUA D

Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates

MASTRO MICHAEL A

Two-step synthesis of manganese oxide nanostructures on carbon for supercapacitor applications

FEIGELSON BORIS N

Defects annealing and impurities activation in III-nitride compound

CHARLES STARK DRAPER LABORATORY INC

Whole angle MEMS gyroscope on hexagonal crystal substrate

HITE JENNIFER K

Method for vertical and lateral control of III-N polarity