Inventor

KIM YIHWAN

US57 patents

⚠️ This page may combine multiple inventors who share the name “KIM YIHWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM YIHWAN

APPLIED MATERIALS INC

Epitaxial deposition process and apparatus

Methods of forming carbon-containing silicon epitaxial layers

Methods of selective deposition of heavily doped epitaxial SiGe

Methods to fabricate MOSFET devices using selective deposition process

Formation and treatment of epitaxial layer containing silicon and carbon

Formation of epitaxial layer containing silicon and carbon

Use of Cl2 and/or HCl during silicon epitaxial film formation

Selective epitaxy process with alternating gas supply

Selective epitaxy process with alternating gas supply

Selective epitaxy process with alternating gas supply

Method of modifying epitaxial growth shape on source drain area of transistor

Method of modifying epitaxial growth shape on source drain area of transistor

Use of CL2 and/or HCL during silicon epitaxial film formation

Phosphorus containing Si epitaxial layers in N-type source/drain junctions

Use of Cl2 and/or HCl during silicon epitaxial film formation

Selective deposition

Methods of selective deposition of heavily doped epitaxial SiGe

Methods and apparatus for forming horizontal gate all around device structures

Selective epitaxial germanium growth on silicon-trench fill and in situ doping

Methods to fabricate MOSFET devices using a selective deposition process

Method of ultra-shallow junction formation using Si film alloyed with carbon

Pre-cleaning of substrates in epitaxy chambers

Methods to fabricate MOSFET devices using a selective deposition process

Methods of controlling morphology during epitaxial layer formation

Carbon precursors for use during silicon epitaxial film formation

Method of forming strain-relaxed buffer layers

Epitaxy of high tensile silicon alloy for tensile strain applications

Methods and apparatus for deposition processes

Formation and treatment of epitaxial layer containing silicon and carbon

Selective formation of silicon carbon epitaxial layer

Method of forming conformal silicon layer for recessed source-drain

Fin formation by epitaxial deposition

Method of forming an embedded silicon carbon epitaxial layer

Halogenated dopant precursors for epitaxy

Methods and apparatus for deposition processes

SAMSUNG ELECTRONICS CO LTD

Semiconductor device and method for manufacturing the same

Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same

Semiconductor device

Semiconductor device

Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same

Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same

Semiconductor devices and method of fabricating the same

YE ZHIYUAN

Method and apparatus for gas delivery

Method and apparatus for gas delivery

Use of CL2 and/or HCL during silicon epitaxial film formation

Carbon addition for low resistivity in situ doped silicon epitaxy

Epitaxy of high tensile silicon alloy for tensile strain applications

MYO NYI O

Methods and apparatus for deposition processes

KIM YIHWAN

Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon

LAM ANDREW

Selective epitaxy process control