Inventor
YANG JUNG-PING
TW35 patents
⚠️ This page may combine multiple inventors who share the name “YANG JUNG-PING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS10503421B2Dec 10, 2019
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9449656B2Sep 20, 2016
Memory with bit cell header transistor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9449663B2Sep 20, 2016
Circuit for memory write data operation
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US11301148B2Apr 12, 2022
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10949100B2Mar 16, 2021
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9721651B2Aug 1, 2017
Write driver and level shifter having shared transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9484084B2Nov 1, 2016
Pulling devices for driving data lines
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US12237050B2Feb 25, 2025
Three-dimensional (3-D) write assist scheme for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11675505B2Jun 13, 2023
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11417377B2Aug 16, 2022
Three-dimensional (3-D) write assist scheme for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11963348B2Apr 16, 2024
Integrated circuit read only memory (ROM) structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11723194B2Aug 8, 2023
Integrated circuit read only memory (ROM) structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10049706B2Aug 14, 2018
Memory and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9218262B2Dec 22, 2015
Dynamic memory cell replacement using column redundancy
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10777244B2Sep 15, 2020
Three-dimensional (3-D) write assist scheme for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10176855B2Jan 8, 2019
Three-dimensional (3-D) write assist scheme for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10001801B2Jun 19, 2018
Voltage providing circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9905291B2Feb 27, 2018
Circuit and method of generating a sense amplifier enable signal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US9564193B2Feb 7, 2017
Circuit to generate a sense amplifier enable signal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US9659603B2May 23, 2017
Power management circuit for an electronic device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
TAIWAN SEMICONDUCTOR MFG
8 patentsUS9117510B2Aug 25, 2015
Circuit for memory write data operation
TAIWAN SEMICONDUCTOR MFG69 citations98
US9083342B2Jul 14, 2015
Circuit and method for power management
TAIWAN SEMICONDUCTOR MFG4 citations73
US9240233B1Jan 19, 2016
Integrated circuit having voltage mismatch reduction
TAIWAN SEMICONDUCTOR MFG3 citations72
US9104214B2Aug 11, 2015
Voltage providing circuit
TAIWAN SEMICONDUCTOR MFG3 citations62
US8385136B2Feb 26, 2013
Memory circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US9390816B2Jul 12, 2016
Integrated circuit having voltage mismatch reduction
TAIWAN SEMICONDUCTOR MFG0 citations51
US9275181B2Mar 1, 2016
Cell design
TAIWAN SEMICONDUCTOR MFG1 citations51
US9164522B2Oct 20, 2015
Wake up bias circuit and method of using the same
TAIWAN SEMICONDUCTOR MFG0 citations41
CHENG HONG-CHEN
3 patentsUS8675439B2Mar 18, 2014
Bit line voltage bias for low power memory design
CHENG HONG-CHEN8 citations81
US9058858B2Jun 16, 2015
Method and apparatus for dual rail SRAM level shifter with latching
CHENG HONG-CHEN4 citations72
US8792292B2Jul 29, 2014
Providing row redundancy to solve vertical twin bit failures
CHENG HONG-CHEN0 citations41
YANG JUNG-PING
3 patentsUS8982609B2Mar 17, 2015
Memory having read assist device and method of operating the same
YANG JUNG-PING6 citations71
US9153302B2Oct 6, 2015
Memory and method of operating the same
YANG JUNG-PING2 citations61
US8976611B2Mar 10, 2015
Asymmetric sensing amplifier, memory device and designing method
YANG JUNG-PING0 citations50