Inventor
YEH JEN-HAO
TW48 patents
⚠️ This page may combine multiple inventors who share the name “YEH JEN-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
17 patentsUS10524345B2Dec 31, 2019
Residual gain monitoring and reduction for EUV drive laser
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10429729B2Oct 1, 2019
EUV radiation modification methods and systems
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9673323B2Jun 6, 2017
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11419203B2Aug 16, 2022
EUV radiation modification methods and systems
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10980100B2Apr 13, 2021
Residual gain monitoring and reduction for EUV drive laser
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10917959B2Feb 9, 2021
EUV radiation modification methods and systems
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11800626B2Oct 24, 2023
Shock wave visualization for extreme ultraviolet plasma optimization
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11452197B2Sep 20, 2022
Shock wave visualization for extreme ultraviolet plasma optimization
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US11737200B2Aug 22, 2023
Residual gain monitoring and reduction for EUV drive laser
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11723141B2Aug 8, 2023
EUV radiation generation methods and systems
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069805B2Jul 20, 2021
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10852191B2Dec 1, 2020
Light source system and polarization angle adjusting method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12114412B2Oct 8, 2024
Shock wave visualization for extreme ultraviolet plasma optimization
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10510882B2Dec 17, 2019
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10121890B2Nov 6, 2018
High voltage transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9793385B2Oct 17, 2017
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9660108B2May 23, 2017
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
7 patentsUS9190535B2Nov 17, 2015
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG12 citations84
US8969913B2Mar 3, 2015
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG5 citations84
US9257533B2Feb 9, 2016
Method of making an insulated gate bipolar transistor structure
TAIWAN SEMICONDUCTOR MFG2 citations63
US9093494B2Jul 28, 2015
Guard structure for semiconductor structure and method of forming guard layout pattern for semiconductor layout pattern
TAIWAN SEMICONDUCTOR MFG2 citations63
US9379188B2Jun 28, 2016
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG0 citations52
US9257979B2Feb 9, 2016
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG0 citations52
US9214547B2Dec 15, 2015
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG0 citations52
LIN WEI-CHIEH
5 patentsUS8120100B2Feb 21, 2012
Overlapping trench gate semiconductor device
LIN WEI-CHIEH11 citations83
US8168480B2May 1, 2012
Fabricating method for forming integrated structure of IGBT and diode
LIN WEI-CHIEH6 citations71
US8198684B2Jun 12, 2012
Semiconductor device with drain voltage protection for ESD
LIN WEI-CHIEH4 citations61
US8241978B2Aug 14, 2012
Method of manufacturing semiconductor device having integrated MOSFET and Schottky diode
LIN WEI-CHIEH2 citations60
US8242537B2Aug 14, 2012
IGBT with fast reverse recovery time rectifier and manufacturing method thereof
LIN WEI-CHIEH1 citations51
ANPEC ELECTRONICS CORP
3 patentsUS7867854B2Jan 11, 2011
Method of fabricating power semiconductor device
ANPEC ELECTRONICS CORP4 citations61
US8049273B2Nov 1, 2011
Semiconductor device for improving the peak induced voltage in switching converter
ANPEC ELECTRONICS CORP3 citations60
US7682903B1Mar 23, 2010
Method of forming a power device
ANPEC ELECTRONICS CORP0 citations39
LEADTREND TECH CORP
3 patentsUS10204896B2Feb 12, 2019
Vertical double diffusion metal-oxide-semiconductor power device
LEADTREND TECH CORP1 citations53
US10580862B2Mar 3, 2020
High-voltage semiconductor devices with improved EAS and related manufacturing method thereof
LEADTREND TECH CORP0 citations39
US10269897B2Apr 23, 2019
Power metal-oxide-semiconductor field-effect transistor device with three-dimensional super junction and fabrication method thereof
LEADTREND TECH CORP0 citations34