Inventor
LAROCHE JEFFREY R
US28 patents
⚠️ This page may combine multiple inventors who share the name “LAROCHE JEFFREY R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RAYTHEON CO
24 patentsUS7968865B2Jun 28, 2011
Boron aluminum nitride diamond heterostructure
RAYTHEON CO21 citations92
US7834456B2Nov 16, 2010
Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate
RAYTHEON CO27 citations92
US9356045B2May 31, 2016
Semiconductor structure having column III-V isolation regions
RAYTHEON CO13 citations84
US10224285B2Mar 5, 2019
Nitride structure having gold-free contact and methods for forming such structures
RAYTHEON CO7 citations83
US10096550B2Oct 9, 2018
Nitride structure having gold-free contact and methods for forming such structures
RAYTHEON CO7 citations83
US9478508B1Oct 25, 2016
Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmission
RAYTHEON CO19 citations83
US7994550B2Aug 9, 2011
Semiconductor structures having both elemental and compound semiconductor devices on a common substrate
RAYTHEON CO9 citations83
US10566428B2Feb 18, 2020
Method for forming gate structures for group III-V field effect transistors
RAYTHEON CO6 citations73
US7557378B2Jul 7, 2009
Boron aluminum nitride diamond heterostructure
RAYTHEON CO5 citations73
US11476154B2Oct 18, 2022
Field effect transistor having improved gate structures
RAYTHEON CO2 citations72
US11177216B2Nov 16, 2021
Nitride structures having low capacitance gate contacts integrated with copper damascene structures
RAYTHEON CO2 citations72
US9761445B2Sep 12, 2017
Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (SICOI) wafers
RAYTHEON CO2 citations72
US11784248B2Oct 10, 2023
Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures
RAYTHEON CO0 citations62
US11515410B2Nov 29, 2022
Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures
RAYTHEON CO1 citations62
US11205953B2Dec 21, 2021
Heterogeneously integrated power converter assembly
RAYTHEON CO0 citations62
US9331153B2May 3, 2016
Methods and structures for forming microstrip transmission lines on thin silicon on insulator (SOI) wafers
RAYTHEON CO2 citations62
US11239326B2Feb 1, 2022
Electrode structure for field effect transistor
RAYTHEON CO0 citations61
US11710708B2Jul 25, 2023
On-chip EMF isolation of an integrated circuit coupled with photoconductive semiconductor switch under an on-chip faraday cage
RAYTHEON CO0 citations56
US10566896B2Feb 18, 2020
Heterogeneously integrated power converter assembly
RAYTHEON CO0 citations51
US11581448B2Feb 14, 2023
Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors
RAYTHEON CO0 citations50
US11848662B2Dec 19, 2023
Tunable monolithic group III-nitride filter banks
RAYTHEON CO0 citations47
US12406901B2Sep 2, 2025
Wafer-scale direct bonded array core block for an active electronically steerable array (AESA)
RAYTHEON CO0 citations43
US12334906B2Jun 17, 2025
Multi-layer resonator assembly and method for fabricating same
RAYTHEON CO0 citations43
US10340812B2Jul 2, 2019
Flexible power converter architecture based on interposer and modular electronic units
RAYTHEON CO0 citations41