Inventor

VAARTSTRA BRIAN A

US146 patents

⚠️ This page may combine multiple inventors who share the name “VAARTSTRA BRIAN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VAARTSTRA BRIAN A

MICRON TECHNOLOGY INC

Systems and methods for forming metal oxide layers

Systems and methods for forming metal oxides using metal diketonates and/or ketoimines

Systems and methods of forming refractory metal nitride layers using disilazanes

Methods of forming a phosphorous doped silicon dioxide comprising layer

Systems and methods of forming refractory metal nitride layers using disilazanes

Systems and methods for forming strontium- and/or barium-containing layers

Systems and method for forming silicon oxide layers

Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands

Systems and methods for forming metal oxides using alcohols

Systems and methods for forming tantalum oxide layers and tantalum precursor compounds

Systems and methods for forming tantalum silicide layers

Systems and methods for forming metal-doped alumina

Systems and methods for forming refractory metal nitride layers using organic amines

Systems and methods for forming refractory metal nitride layers using disilazanes

Systems and methods for forming strontium- and/or barium-containing layers

Aluminum-containing material and atomic layer deposition methods

Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands

Metal complexes with chelating O-and/or N-donor ligands

Complexes having tris(pyrazolyl)methanate ligands

Mixed metal nitride and boride barrier layers

Methods of making semiconductor devices

Precursor mixtures for use in preparing layers on substrates

Supercritical compositions for removal of organic material and methods of using same

Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands

Supercritical etching compositions and method of using same

Methods for preparing ruthenium oxide films

Methods for preparing ruthenium metal films

Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide

Method of depositing films on semiconductor devices by using carboxylate complexes

Methods for preparing ruthenium and osmium compounds

Device structures including ruthenium silicide diffusion barrier layers

Systems and methods of forming refractory metal nitride layers using organic amines

Systems and methods for forming metal oxides using alcohols

Atomic layer deposition methods and chemical vapor deposition methods

Systems and methods for forming tantalum oxide layers and tantalum precursor compounds

Systems and methods of forming refractory metal nitride layers using organic amines

Method of forming trench isolation in the fabrication of integrated circuitry

Deposition methods using heteroleptic precursors

Systems and methods for forming zirconium and/or hafnium-containing layers

Atomic layer deposition methods

Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides

Method of forming a Ta2O5 comprising layer

Method for forming refractory metal oxide layers with tetramethyldisiloxane

Supercritical etching compositions and method of using same

Method of depositing films by using carboxylate complexes

Methods for removing rhodium- and iridium-containing films

Method of depositing films by using carboxylate complexes

Methods, complexes, and system for forming metal-containing films

ADVANCED TECH MATERIALS

Growth of BaSrTiO3 using polyamine-based precursors

Method of forming metal films on a substrate by chemical vapor deposition