P

Inventor

CZORNOMAZ LUKAS

CH56 patents
⚠️ This page may combine multiple inventors who share the name “CZORNOMAZ LUKAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

49 patents
US9891112B1Feb 13, 2018

Radiation detector

IBM36 citations93
US9570169B1Feb 14, 2017

Resistive memory device

IBM30 citations92
US9129863B2Sep 8, 2015

Method to form dual channel group III-V and Si/Ge FINFET CMOS

IBM18 citations92
US9748098B2Aug 29, 2017

Controlled confined lateral III-V epitaxy

IBM6 citations84
US10340661B2Jul 2, 2019

Electro-optical device with lateral current injection regions

IBM13 citations83
US9864134B2Jan 9, 2018

Semiconductor structure and method for manufacturing a semiconductor structure

IBM9 citations83
US9239424B2Jan 19, 2016

Semiconductor device and method for fabricating the same

IBM7 citations83
US10810506B1Oct 20, 2020

Qubit biasing scheme using non-volatile devices

IBM10 citations82
US9735010B1Aug 15, 2017

Fabrication of semiconductor fin structures

IBM9 citations82
US9870953B2Jan 16, 2018

System on chip material co-integration

IBM4 citations73
US9515090B2Dec 6, 2016

Method to form dual channel group III-V and Si/Ge FINFET CMOS and integrated circuit fabricated using the method

IBM3 citations73
US9437427B1Sep 6, 2016

Controlled confined lateral III-V epitaxy

IBM4 citations73
US10734787B2Aug 4, 2020

Electro-optical device with lateral current injection regions

IBM1 citations72
US10304934B2May 28, 2019

Fabricating raised source drain contacts of a CMOS structure

IBM1 citations72
US9984929B1May 29, 2018

Fabricating contacts of a CMOS structure

IBM4 citations72
US9881921B2Jan 30, 2018

Fabricating a dual gate stack of a CMOS structure

IBM2 citations72
US9786664B2Oct 10, 2017

Fabricating a dual gate stack of a CMOS structure

IBM2 citations72
US10447006B2Oct 15, 2019

Electro-optical device with asymmetric, vertical current injection ohmic contacts

IBM2 citations71
US10395732B2Aug 27, 2019

Resistive memory apparatus using variable-resistance channels with high- and low-resistance regions

IBM2 citations71
US10249492B2Apr 2, 2019

Fabrication of compound semiconductor structures

IBM2 citations71
US9640394B2May 2, 2017

Method for fabricating a semiconductor structure

IBM2 citations71
US9513436B2Dec 6, 2016

Semiconductor device

IBM5 citations71
US9704757B1Jul 11, 2017

Fabrication of semiconductor structures

IBM2 citations70
US9997409B1Jun 12, 2018

Fabricating contacts of a CMOS structure

IBM1 citations62
US9917164B1Mar 13, 2018

Fabricating raised source drain contacts of a CMOS structure

IBM1 citations62
US10897121B2Jan 19, 2021

Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals

IBM0 citations61
US10840264B2Nov 17, 2020

Ultra-thin-body GaN on insulator device

IBM1 citations61
US9459405B2Oct 4, 2016

Method for fabricating a semiconductor device for use in an optical application

IBM2 citations61
US11270999B2Mar 8, 2022

Capacitorless DRAM cell

IBM0 citations59
US11031402B1Jun 8, 2021

Capacitorless dram cell

IBM0 citations59
US11070029B2Jul 20, 2021

Method of forming an electro-optical device with lateral current injection regions

IBM0 citations58
US9252157B2Feb 2, 2016

Method to form group III-V and Si/Ge FINFET on insulator and integrated circuit fabricated using the method

IBM1 citations52
US9123585B1Sep 1, 2015

Method to form group III-V and Si/Ge FINFET on insulator

IBM1 citations52
US10763644B2Sep 1, 2020

Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals

IBM0 citations51
US10594111B2Mar 17, 2020

Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals

IBM0 citations51
US10529771B2Jan 7, 2020

Array of optoelectronic structures and fabrication thereof

IBM0 citations51
US10410926B2Sep 10, 2019

Fabricating contacts of a CMOS structure

IBM0 citations51
US10103234B1Oct 16, 2018

Fabricating raised source drain contacts of a CMOS structure

IBM0 citations51
US9953125B2Apr 24, 2018

Design/technology co-optimization platform for high-mobility channels CMOS technology

IBM1 citations51
US9923022B2Mar 20, 2018

Array of optoelectronic structures and fabrication thereof

IBM0 citations51
US9823414B2Nov 21, 2017

Method for fabricating a semiconductor device for use in an optical application

IBM0 citations51
US9564452B1Feb 7, 2017

Fabrication of hybrid semiconductor circuits

IBM0 citations51
US11183978B2Nov 23, 2021

Low-noise amplifier with quantized conduction channel

IBM0 citations50
US10529562B2Jan 7, 2020

Fabrication of compound semiconductor structures

IBM0 citations50
US10424478B2Sep 24, 2019

Fabrication of semiconductor fin structures

IBM0 citations50
US10037800B2Jul 31, 2018

Resistive memory apparatus using variable-resistance channels with high- and low-resistance regions

IBM0 citations50
US11674237B2Jun 13, 2023

Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers

IBM0 citations49
US11621340B2Apr 4, 2023

Field-effect transistor structure and fabrication method

IBM0 citations49
US10256092B2Apr 9, 2019

Fabrication of semiconductor structures

IBM0 citations49

NANOMADE CONCEPT

1 patent

Showing the top 50 of 56 patents by PatentIndex Score.