Inventor
LOU CHINE-GIE
TW73 patents
⚠️ This page may combine multiple inventors who share the name “LOU CHINE-GIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
23 patentsUS6403486B1Jun 11, 2002
Method for forming a shallow trench isolation
TAIWAN SEMICONDUCTOR MFG254 citations99
US6274497B1Aug 14, 2001
Copper damascene manufacturing process
TAIWAN SEMICONDUCTOR MFG108 citations98
US6492270B1Dec 10, 2002
Method for forming copper dual damascene
TAIWAN SEMICONDUCTOR MFG77 citations96
US6291333B1Sep 18, 2001
Method of fabricating dual damascene structure
TAIWAN SEMICONDUCTOR MFG55 citations96
US6204141B1Mar 20, 2001
Method of manufacturing a deep trench capacitor
TAIWAN SEMICONDUCTOR MFG65 citations96
US7371663B2May 13, 2008
Three dimensional IC device and alignment methods of IC device substrates
TAIWAN SEMICONDUCTOR MFG22 citations93
US6468858B1Oct 22, 2002
Method of forming a metal insulator metal capacitor structure
TAIWAN SEMICONDUCTOR MFG51 citations93
US6451650B1Sep 17, 2002
Low thermal budget method for forming MIM capacitor
TAIWAN SEMICONDUCTOR MFG26 citations93
US6440847B1Aug 27, 2002
Method for forming a via and interconnect in dual damascene
TAIWAN SEMICONDUCTOR MFG24 citations93
US6417066B1Jul 9, 2002
Method of forming a DRAM capacitor structure including increasing the surface area using a discrete silicon mask
TAIWAN SEMICONDUCTOR MFG20 citations93
US6265307B1Jul 24, 2001
Fabrication method for a dual damascene structure
TAIWAN SEMICONDUCTOR MFG28 citations93
US6251735B1Jun 26, 2001
Method of forming shallow trench isolation structure
TAIWAN SEMICONDUCTOR MFG42 citations93
US6235579B1May 22, 2001
Method for manufacturing stacked capacitor
TAIWAN SEMICONDUCTOR MFG38 citations93
US6372653B1Apr 16, 2002
Method of forming dual damascene structure
TAIWAN SEMICONDUCTOR MFG23 citations91
US6856156B2Feb 15, 2005
Automatically adjustable wafer probe card
TAIWAN SEMICONDUCTOR MFG25 citations89
US6784098B1Aug 31, 2004
Method for forming salicide process
TAIWAN SEMICONDUCTOR MFG20 citations84
US6277732B1Aug 21, 2001
Method of planarizing inter-metal dielectric layer
TAIWAN SEMICONDUCTOR MFG17 citations84
US7781892B2Aug 24, 2010
Interconnect structure and method of fabricating same
TAIWAN SEMICONDUCTOR MFG12 citations81
US6403471B1Jun 11, 2002
Method of forming a dual damascene structure including smoothing the top part of a via
TAIWAN SEMICONDUCTOR MFG11 citations74
US6376326B1Apr 23, 2002
Method of manufacturing DRAM capacitor
TAIWAN SEMICONDUCTOR MFG8 citations74
US6358845B1Mar 19, 2002
Method for forming inter metal dielectric
TAIWAN SEMICONDUCTOR MFG8 citations74
US6323112B1Nov 27, 2001
Method of fabricating integrated circuits
TAIWAN SEMICONDUCTOR MFG14 citations74
US6245633B1Jun 12, 2001
Fabrication method for a double-side double-crown stacked capacitor
TAIWAN SEMICONDUCTOR MFG11 citations74
WORLDWIDE SEMICONDUCTOR MFG
10 patentsUS6174769B1Jan 16, 2001
Method for manufacturing stacked capacitor
WORLDWIDE SEMICONDUCTOR MFG111 citations98
US6432794B1Aug 13, 2002
Process for fabricating capacitor
WORLDWIDE SEMICONDUCTOR MFG23 citations93
US6271083B1Aug 7, 2001
Method of forming a dram crown capacitor
WORLDWIDE SEMICONDUCTOR MFG21 citations93
US6271099B1Aug 7, 2001
Method for forming a capacitor of a DRAM cell
WORLDWIDE SEMICONDUCTOR MFG21 citations93
US6211569B1Apr 3, 2001
Interconnection lines for improving thermal conductivity in integrated circuits and method for fabricating the same
WORLDWIDE SEMICONDUCTOR MFG27 citations93
US6200881B1Mar 13, 2001
Method of forming a shallow trench isolation
WORLDWIDE SEMICONDUCTOR MFG22 citations93
US6187661B1Feb 13, 2001
Method for fabricating metal interconnect structure
WORLDWIDE SEMICONDUCTOR MFG28 citations93
US6171928B1Jan 9, 2001
Method of fabricating shallow trench insolation
WORLDWIDE SEMICONDUCTOR MFG20 citations93
US6159793ADec 12, 2000
Structure and fabricating method of stacked capacitor
WORLDWIDE SEMICONDUCTOR MFG45 citations93
US6187486B1Feb 13, 2001
Method of multi-exposure for improving photolithography resolution
WORLDWIDE SEMICONDUCTOR MFG18 citations82
WORLDWIDE SEMICONDUCTOR MANUFA
8 patentsUS5916823AJun 29, 1999
Method for making dual damascene contact
WORLDWIDE SEMICONDUCTOR MANUFA56 citations96
US6100129AAug 8, 2000
Method for making fin-trench structured DRAM capacitor
WORLDWIDE SEMICONDUCTOR MANUFA49 citations93
US6093590AJul 25, 2000
Method of fabricating transistor having a metal gate and a gate dielectric layer with a high dielectric constant
WORLDWIDE SEMICONDUCTOR MANUFA31 citations93
US6090679AJul 18, 2000
Method for forming a crown capacitor
WORLDWIDE SEMICONDUCTOR MANUFA26 citations93
US6074942AJun 13, 2000
Method for forming a dual damascene contact and interconnect
WORLDWIDE SEMICONDUCTOR MANUFA45 citations93
US5932487AAug 3, 1999
Method for forming a planar intermetal dielectric layer
WORLDWIDE SEMICONDUCTOR MANUFA38 citations93
US6399482B1Jun 4, 2002
Method and structure for a conductive and a dielectric layer
WORLDWIDE SEMICONDUCTOR MANUFA14 citations84
US6117748ASep 12, 2000
Dishing free process for shallow trench isolation
WORLDWIDE SEMICONDUCTOR MANUFA17 citations84
IND TECH RES INST
7 patentsUS5759906AJun 2, 1998
Planarization method for intermetal dielectrics between multilevel interconnections on integrated circuits
IND TECH RES INST163 citations99
US5872045AFeb 16, 1999
Method for making an improved global planarization surface by using a gradient-doped polysilicon trench--fill in shallow trench isolation
IND TECH RES INST96 citations98
US5597754AJan 28, 1997
Increased surface area for DRAM, storage node capacitors, using a novel polysilicon deposition and anneal process
IND TECH RES INST88 citations96
US6239017B1May 29, 2001
Dual damascene CMP process with BPSG reflowed contact hole
IND TECH RES INST37 citations93
US6110826AAug 29, 2000
Dual damascene process using selective W CVD
IND TECH RES INST49 citations93
US5827766AOct 27, 1998
Method for fabricating cylindrical capacitor for a memory cell
IND TECH RES INST49 citations93
US5618747AApr 8, 1997
Process for producing a stacked capacitor having polysilicon with optimum hemispherical grains
IND TECH RES INST49 citations93
TAIWAN SEMICONDUCTOR MFG CORP
2 patentsShowing the top 50 of 73 patents by PatentIndex Score.