Inventor
CHEN HSUEH-CHUNG
TW128 patents
⚠️ This page may combine multiple inventors who share the name “CHEN HSUEH-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
20 patentsUS9219007B2Dec 22, 2015
Double self aligned via patterning
IBM24 citations92
US10276434B1Apr 30, 2019
Structure and method using metal spacer for insertion of variable wide line implantation in SADP/SAQP integration
IBM6 citations84
US9576901B1Feb 21, 2017
Contact area structure and method for manufacturing the same
IBM12 citations84
US9257334B2Feb 9, 2016
Double self-aligned via patterning
IBM13 citations84
US11923246B2Mar 5, 2024
Via CD controllable top via structure
IBM4 citations75
US12094774B2Sep 17, 2024
Back-end-of-line single damascene top via spacer defined by pillar mandrels
IBM2 citations73
US11600325B2Mar 7, 2023
Non volatile resistive memory logic device
IBM2 citations73
US11489111B2Nov 1, 2022
Reversible resistive memory logic gate device
IBM2 citations73
US11164778B2Nov 2, 2021
Barrier-free vertical interconnect structure
IBM3 citations73
US11133216B2Sep 28, 2021
Interconnect structure
IBM3 citations73
US11056426B2Jul 6, 2021
Metallization interconnect structure formation
IBM6 citations73
US10937653B2Mar 2, 2021
Multiple patterning scheme integration with planarized cut patterning
IBM1 citations73
US10825726B2Nov 3, 2020
Metal spacer self aligned multi-patterning integration
IBM2 citations73
US10615027B1Apr 7, 2020
Stack viabar structures
IBM2 citations73
US10553789B1Feb 4, 2020
Fully aligned semiconductor device with a skip-level via
IBM4 citations73
US10032633B1Jul 24, 2018
Image transfer using EUV lithographic structure and double patterning process
IBM3 citations73
US9953915B2Apr 24, 2018
Electrically conductive interconnect including via having increased contact surface area
IBM3 citations73
US9842805B2Dec 12, 2017
Drive-in Mn before copper plating
IBM4 citations73
US9553044B2Jan 24, 2017
Electrically conductive interconnect including via having increased contact surface area
IBM2 citations73
US9385123B2Jul 5, 2016
STI region for small fin pitch in FinFET devices
IBM6 citations73
UNITED MICROELECTRONICS CORP
14 patentsUS6093089AJul 25, 2000
Apparatus for controlling uniformity of polished material
UNITED MICROELECTRONICS CORP55 citations96
US6544373B2Apr 8, 2003
Polishing pad for a chemical mechanical polishing process
UNITED MICROELECTRONICS CORP42 citations93
US6344408B1Feb 5, 2002
Method for improving non-uniformity of chemical mechanical polishing by over coating
UNITED MICROELECTRONICS CORP44 citations93
US6099705AAug 8, 2000
Physical vapor deposition device for forming a uniform metal layer on a semiconductor wafer
UNITED MICROELECTRONICS CORP28 citations93
US6559004B1May 6, 2003
Method for forming three dimensional semiconductor structure and three dimensional capacitor
UNITED MICROELECTRONICS CORP51 citations92
US6077147AJun 20, 2000
Chemical-mechanical polishing station with end-point monitoring device
UNITED MICROELECTRONICS CORP42 citations92
US6524962B2Feb 25, 2003
Method for forming dual-damascene interconnect structure
UNITED MICROELECTRONICS CORP13 citations84
US6580508B1Jun 17, 2003
Method for monitoring a semiconductor wafer in a chemical mechanical polishing process
UNITED MICROELECTRONICS CORP9 citations74
US6461230B1Oct 8, 2002
Chemical-mechanical polishing method
UNITED MICROELECTRONICS CORP9 citations74
US6309555B1Oct 30, 2001
Method for determining thickness of material layer and chemical mechanical polishing endpoint
UNITED MICROELECTRONICS CORP10 citations74
US6238997B1May 29, 2001
Method of fabricating shallow trench isolation
UNITED MICROELECTRONICS CORP10 citations74
US6139680AOct 31, 2000
Exhaust line of chemical-mechanical polisher
UNITED MICROELECTRONICS CORP9 citations74
US6062964AMay 16, 2000
Chemical mechanical polishing apparatus for controlling slurry distribution
UNITED MICROELECTRONICS CORP8 citations74
US6024628AFeb 15, 2000
Method of determining real time removal rate for polishing
UNITED MICROELECTRONICS CORP7 citations74
TAIWAN SEMICONDUCTOR MFG
8 patentsUS7235424B2Jun 26, 2007
Method and apparatus for enhanced CMP planarization using surrounded dummy design
TAIWAN SEMICONDUCTOR MFG150 citations98
US7803713B2Sep 28, 2010
Method for fabricating air gap for semiconductor device
TAIWAN SEMICONDUCTOR MFG22 citations93
US7651893B2Jan 26, 2010
Metal electrical fuse structure
TAIWAN SEMICONDUCTOR MFG28 citations93
US7615841B2Nov 10, 2009
Design structure for coupling noise prevention
TAIWAN SEMICONDUCTOR MFG26 citations93
US7371663B2May 13, 2008
Three dimensional IC device and alignment methods of IC device substrates
TAIWAN SEMICONDUCTOR MFG22 citations93
US7348672B2Mar 25, 2008
Interconnects with improved reliability
TAIWAN SEMICONDUCTOR MFG23 citations93
US7781892B2Aug 24, 2010
Interconnect structure and method of fabricating same
TAIWAN SEMICONDUCTOR MFG12 citations81
US7538346B2May 26, 2009
Semiconductor device
TAIWAN SEMICONDUCTOR MFG5 citations74
IND TECH RES INST
6 patentsUS5872045AFeb 16, 1999
Method for making an improved global planarization surface by using a gradient-doped polysilicon trench--fill in shallow trench isolation
IND TECH RES INST96 citations98
US6239017B1May 29, 2001
Dual damascene CMP process with BPSG reflowed contact hole
IND TECH RES INST37 citations93
US6110826AAug 29, 2000
Dual damascene process using selective W CVD
IND TECH RES INST49 citations93
US6184130B1Feb 6, 2001
Silicide glue layer for W-CVD plug application
IND TECH RES INST9 citations74
US6048794AApr 11, 2000
Selective W CVD plug process with a RTA self-aligned W-silicide barrier layer
IND TECH RES INST10 citations74
US5834377ANov 10, 1998
In situ method for CMP endpoint detection
IND TECH RES INST16 citations74
INFINEON TECHNOLOGIES AG
1 patentGLOBALFOUNDRIES INC
1 patentShowing the top 50 of 128 patents by PatentIndex Score.