Inventor
CHUNG HUNG-CHIN
TW31 patents
Patents
31 patentsUS9590065B2Mar 7, 2017
Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10504789B1Dec 10, 2019
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US12255104B2Mar 18, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US11302818B2Apr 12, 2022
Gate resistance reduction through low-resistivity conductive layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11075124B2Jul 27, 2021
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10699966B2Jun 30, 2020
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9679984B2Jun 13, 2017
Metal gate structure with multi-layer composition
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12278288B2Apr 15, 2025
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12237228B2Feb 25, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176251B2Dec 24, 2024
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142530B2Nov 12, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12087637B2Sep 10, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051753B2Jul 30, 2024
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040235B2Jul 16, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12021145B2Jun 25, 2024
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11916146B2Feb 27, 2024
Gate resistance reduction through low-resistivity conductive layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11804409B2Oct 31, 2023
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735481B2Aug 22, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11437280B2Sep 6, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380793B2Jul 5, 2022
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081396B2Aug 3, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056395B2Jul 6, 2021
Transistor metal gate and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998414B2May 4, 2021
Metal gate structure with multi-layer composition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10867864B2Dec 15, 2020
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12300733B2May 13, 2025
Semiconductor device with a work function layer having an oxygen-blocking dopant layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12142531B2Nov 12, 2024
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12087767B2Sep 10, 2024
Method of tuning threshold voltages of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11538805B2Dec 27, 2022
Method of tuning threshold voltages of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11387344B2Jul 12, 2022
Method of manufacturing a semiconductor device having a doped work-function layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11322411B2May 3, 2022
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11302582B2Apr 12, 2022
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61