Inventor
JENNE FREDRICK
US25 patents
⚠️ This page may combine multiple inventors who share the name “JENNE FREDRICK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
Longitude Flash Memory Solutions Ltd
7 patentsUS10374067B2Aug 6, 2019
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd3 citations84
US11222965B2Jan 11, 2022
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd1 citations73
US10903342B2Jan 26, 2021
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd1 citations73
US10903068B2Jan 26, 2021
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd1 citations73
US10896973B2Jan 19, 2021
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd1 citations73
US12266521B2Apr 1, 2025
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd0 citations62
US11784243B2Oct 10, 2023
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd0 citations62
CYPRESS SEMICONDUCTOR CORP
6 patentsUS7969804B1Jun 28, 2011
Memory architecture having a reference current generator that provides two reference currents
CYPRESS SEMICONDUCTOR CORP25 citations91
US7787303B2Aug 31, 2010
Programmable CSONOS logic element
CYPRESS SEMICONDUCTOR CORP9 citations84
US9018693B2Apr 28, 2015
Deuterated film encapsulation of nonvolatile charge trap memory device
CYPRESS SEMICONDUCTOR CORP6 citations71
US10263087B2Apr 16, 2019
Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
CYPRESS SEMICONDUCTOR CORP0 citations52
US9741803B2Aug 22, 2017
Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
CYPRESS SEMICONDUCTOR CORP0 citations52
US7881118B2Feb 1, 2011
Sense transistor protection for memory programming
CYPRESS SEMICONDUCTOR CORP0 citations52
JENNE FREDRICK
5 patentsUS8222688B1Jul 17, 2012
SONOS stack with split nitride memory layer
JENNE FREDRICK58 citations97
US8710578B2Apr 29, 2014
SONOS stack with split nitride memory layer
JENNE FREDRICK30 citations92
US9299568B2Mar 29, 2016
SONOS ONO stack scaling
JENNE FREDRICK7 citations83
US8710579B1Apr 29, 2014
SONOS stack with split nitride memory layer
JENNE FREDRICK5 citations83
US8269287B2Sep 18, 2012
Floating gate memory device with increased coupling coefficient
JENNE FREDRICK0 citations41
LEVY SAGY
3 patentsUS9449831B2Sep 20, 2016
Oxide-nitride-oxide stack having multiple oxynitride layers
LEVY SAGY22 citations92
US8643124B2Feb 4, 2014
Oxide-nitride-oxide stack having multiple oxynitride layers
LEVY SAGY27 citations92
US9716153B2Jul 25, 2017
Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
LEVY SAGY3 citations72