Inventor
BINA MARKUS
DE19 patents
⚠️ This page may combine multiple inventors who share the name “BINA MARKUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
11 patentsUS10615272B2Apr 7, 2020
Method for producing IGBT with dV/dt controllability
INFINEON TECHNOLOGIES AG4 citations84
US10332973B2Jun 25, 2019
N-channel bipolar power semiconductor device with p-layer in the drift volume
INFINEON TECHNOLOGIES AG8 citations82
US10304952B2May 28, 2019
Power semiconductor device with dV/dt controllability and cross-trench arrangement
INFINEON TECHNOLOGIES AG2 citations72
US11250966B2Feb 15, 2022
Apparatus and method for neutron transmutation doping of semiconductor wafers
INFINEON TECHNOLOGIES AG0 citations62
US11075290B2Jul 27, 2021
Power semiconductor device having a cross-trench arrangement
INFINEON TECHNOLOGIES AG0 citations62
US10840362B2Nov 17, 2020
IGBT with dV/dt controllability
INFINEON TECHNOLOGIES AG1 citations62
US10468148B2Nov 5, 2019
Apparatus and method for neutron transmutation doping of semiconductor wafers
INFINEON TECHNOLOGIES AG0 citations52
US10546939B2Jan 28, 2020
N-channel bipolar power semiconductor device with P-layer in the drift volume
INFINEON TECHNOLOGIES AG0 citations51
US9978851B2May 22, 2018
n-channel bipolar power semiconductor device with p-layer in the drift volume
INFINEON TECHNOLOGIES AG0 citations51
US10153764B2Dec 11, 2018
Current measurement in a power semiconductor device
INFINEON TECHNOLOGIES AG0 citations41
US10109624B2Oct 23, 2018
Semiconductor device comprising transistor cell units with different threshold voltages
INFINEON TECHNOLOGIES AG0 citations41
INFINEON TECHNOLOGIES AUSTRIA AG
8 patentsUS10530360B2Jan 7, 2020
Double gate transistor device and method of operating
INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US10355116B2Jul 16, 2019
Power semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations73
US10276681B2Apr 30, 2019
Double gate transistor device and method of operating
INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US12003231B2Jun 4, 2024
Double gate transistor device and method of operating
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10923578B2Feb 16, 2021
Semiconductor device comprising a barrier region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10903353B2Jan 26, 2021
Double gate transistor device and method of operating
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10644141B2May 5, 2020
Power semiconductor device with dV/dt controllability
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US10978596B2Apr 13, 2021
Power diode and method of manufacturing a power diode
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61