Inventor

PETZ CHRISTOPHER W

US36 patents

⚠️ This page may combine multiple inventors who share the name “PETZ CHRISTOPHER W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PETZ CHRISTOPHER W

MICRON TECHNOLOGY INC

Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systems

Phase change memory stack with treated sidewalls

Integrated assemblies and methods of forming integrated assemblies

Variable resistance memory stack with treated sidewalls

Variable resistance memory stack with treated sidewalls

Memory cells and methods of forming memory cells

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods

Electrode/dielectric barrier material formation and structures

Storage node shaping

Memory cells

Microelectronic devices, memory devices, and electronic systems

Semiconductor devices and electronic systems including an etch stop material, and related methods

Devices, methods of forming a device, and memory devices

Methods of forming resistive memory elements

Integrated structures with conductive regions having at least one element from group 2 of the periodic table

Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars

Methods of forming an apparatus, and related apparatuses and electronic systems

Doped titanium nitride materials for dram capacitors, and related semiconductor devices

Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor

Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor

Apparatus including barrier materials within access line structures, and related methods and electronic systems

Active area salicidation for NMOS and PMOS devices

Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars

Integrated assemblies and methods of forming integrated assemblies

Methods of forming resistive memory elements

Assemblies having vertically-extending structures

Methods of forming resistive memory elements

Memory cells and methods of forming memory cells

Methods of utilizing etch-stop material during fabrication of capacitors, integrated assemblies comprising capacitors

Material deposition systems, and related methods

Forming a barrier material on an electrode

Electrode formation

INTEL CORP

Barrier film techniques and configurations for phase-change memory elements

Phase change memory structures

Method and apparatus for improved etch stop layer or hard mask layer of a memory device