Inventor
JIN BEAN-JUN
KR2 patents
Patents
2 patentsUS6858529B2Feb 22, 2005
Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
SAMSUNG ELECTRONICS CO LTD9 citations72
US7176533B2Feb 13, 2007
Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
SAMSUNG ELECTRONICS CO LTD2 citations61