Inventor
SONG BYONG GWON
KR30 patents
⚠️ This page may combine multiple inventors who share the name “SONG BYONG GWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS8053846B2Nov 8, 2011
Field effect transistor (FET) having nano tube and method of manufacturing the FET
SAMSUNG ELECTRONICS CO LTD8 citations84
US11296289B2Apr 5, 2022
Thin film transistor and method of manufacturing the same and thin film transistor panel and electronic device
SAMSUNG ELECTRONICS CO LTD2 citations72
US12256585B2Mar 18, 2025
Thin film transistor and method of manufacturing the same and thin film transistor panel and electronic device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11139440B2Oct 5, 2021
Thin film transistor and method of manufacturing the same and thin film transistor array panel and electronic device
SAMSUNG ELECTRONICS CO LTD0 citations62
US7851231B2Dec 14, 2010
Method of fabricating field emission array type light emitting unit
SAMSUNG ELECTRONICS CO LTD0 citations52
US7755272B2Jul 13, 2010
Anode panel and field emission type backlight unit having the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7727039B2Jun 1, 2010
Method of aging field emission devices
SAMSUNG ELECTRONICS CO LTD1 citations52
US9761818B2Sep 12, 2017
Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and electronic device comprising the thin film transistor
SAMSUNG ELECTRONICS CO LTD1 citations51
US7714496B2May 11, 2010
Field emission display device and field emission type backlight device having a sealing structure for vacuum exhaust
SAMSUNG ELECTRONICS CO LTD0 citations49
US10302818B2May 28, 2019
Photonic crystal structure, method of manufacturing the photonic crystal structure, reflective color filter, and display apparatus employing the photonic crystal structure
SAMSUNG ELECTRONICS CO LTD0 citations46
US7942714B2May 17, 2011
Method of manufacturing field emission device
SAMSUNG ELECTRONICS CO LTD0 citations42
SAMSUNG SDI CO LTD
11 patentsUS7564085B2Jul 21, 2009
Mechanical memory device and method of manufacturing the same
SAMSUNG SDI CO LTD10 citations84
US7193357B2Mar 20, 2007
Field emission backlight device and method of fabricating
SAMSUNG SDI CO LTD8 citations73
US7719111B2May 18, 2010
Nanowire electromechanical device and method of fabricating the same
SAMSUNG SDI CO LTD6 citations63
US7326098B2Feb 5, 2008
Method of fabricating a field emission backlight device
SAMSUNG SDI CO LTD2 citations62
US7646142B2Jan 12, 2010
Field emission device (FED) having cathode aperture to improve electron beam focus and its method of manufacture
SAMSUNG SDI CO LTD2 citations61
US7432646B2Oct 7, 2008
Thermal electron emission backlight device
SAMSUNG SDI CO LTD6 citations61
US7701127B2Apr 20, 2010
Field emission backlight unit
SAMSUNG SDI CO LTD0 citations50
US7541730B2Jun 2, 2009
Sealing structure of field emission display device and method of manufacturing the same
SAMSUNG SDI CO LTD0 citations50
US7503824B2Mar 17, 2009
Supporting spacers of a flat display device
SAMSUNG SDI CO LTD0 citations50
US7315111B2Jan 1, 2008
Supporting spacers of a flat display device
SAMSUNG SDI CO LTD0 citations50
US7569980B2Aug 4, 2009
Thermal electron emitting backlight unit
SAMSUNG SDI CO LTD0 citations39
CHA SEUNG NAM
3 patentsUS8691012B2Apr 8, 2014
Method of manufacturing zinc oxide nanowires
CHA SEUNG NAM7 citations83
US8840985B2Sep 23, 2014
Composition for forming inorganic pattern and method for forming inorganic pattern using the same
CHA SEUNG NAM0 citations48
US8536578B2Sep 17, 2013
Thin film transistor comprising nanowires and fabrication method thereof
CHA SEUNG NAM0 citations40